High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

Kazior,; Laroche,; Urteaga,; Bergman,; Choe,; Lee, Myeong Soo; Seong,; Seo, Seo; Yen,; Lubyshev,; Fastenau,; Liu, Ming; Smith, Trevor A.; Clark, Matt; Thompson, Daniel; Bulsara,; Fitzgerald,; Drazek,; Guiot,

doi:10.1109/csics.2010.5619670

Cited by 15 publications

(5 citation statements)

References 7 publications

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“…The complications of planarizing over large topography in close proximity can limit the co-integration of alternate material between devices in a circuit. For heterogeneous devices and circuits, patterned selective-area-growth (SAG) methods provide a direct and potentially more flexible means to directly integrate disparate materials epitaxially at the fine feature level [1], if defectivity can be managed. One such technique is by means of trench-based epitaxial techniques, which include the well-known Aspect-Ratio-Trapping (ART) of defects [2], [3].…”

Section: Defect and Epitaxy Engineeringmentioning

confidence: 99%

(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics

Thean¹,

Collaert²,

Radu³

et al. 2015

ECS Trans.

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Section: Defect and Epitaxy Engineeringmentioning

confidence: 99%

(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics

Thean¹,

Collaert²,

Radu³

et al. 2015

ECS Trans.

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“…This will allow the integration process to take advantage of the high yield of the CMOS BEOL. Examples of completed demonstration circuits are shown in figure 3 (a high-speed InP-Si CMOS differential amplifier [18]-the COSMOS Phase 1 demonstration vehicle containing highspeed InP HBT differential pairs and CMOS current sources and an InP HBT buffer amplifier) and 4 (a high-dynamic-range digital-to-analogue converter (DAC) with over 50 000 CMOS transistors and 1500 InP HBTs) [19]. The DAC was implemented with 180 nm CMOS.…”

Section: (I) Iii-v Bicmos (Inp and Si Cmos)mentioning

confidence: 99%

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Kazior

2014

Phil. Trans. R. Soc. A.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

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“…The InP HBT -Si CMOS integrated process (and design kit) has been successfully scaled to 180nm CMOS, 1um emitter InP HBTs, and 200mm diameter SOLES. Using the COSMOS design kit, we designed a low power dissipation (<2.5W), high resolution (14 bit, > 78 dB spur free dynamic range (SFDR)) digital-to-analog converter (DAC) (Figure 6, left) (11,12). DAC3 uses a return to zero (RZ), current steering (Current-Source-Switch or CSS) architecture with on-chip static and dynamic calibration circuitry.…”

Section: Circuit Demonstrationsmentioning

confidence: 99%

(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate

Kazior¹,

LaRoche

Hoke

2013

ECS Trans.

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Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including full multielement phased arrays at mm-wave frequencies. However, the performance is not ideal because silicon cannot compete with III-V technologies in terms of power density, efficiency, noise figure, dynamic range or linearity, and speed.Heterogeneously integrating III-V devices with the CMOS gives the designers state of art III-V performance combined with the integration density and functionality of silicon. We present the status of the direct growth/fabrication of InP HBT and GaN HEMT materials/devices on a silicon substrate containing high density Si CMOS. The integration process is similar to the SiGe BiCMOS process and can be considered a III-V BiCMOS process.

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High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

Cited by 15 publications

References 7 publications

(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics

(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate

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