High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs

Patten, E. A.; Goetz, P. M.; Vilela, M. F.; Olsson, K. R.; Lofgreen, D. D.; Vodicka, J. G.; Johnson, S. M.

doi:10.1007/s11664-010-1294-1

Cited by 12 publications

(8 citation statements)

References 10 publications

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“…Figure 15 shows NEDT histograms of both the MWIR and LWIR bands of two-color layer on Si at 78 K. The NEDT operability of the MWIR band shows a very high value of 99.97%, and the operability drops slightly to 99.3% for the LWIR band. 6 As seen from Fig. 15, no substantial improvement in MWIR NEDT operability can be noticed beyond 3 9 median NEDT, and no improvement in LWIR NEDT operability is seen beyond 5 9 median NEDT.…”

Section: Hgcdte On Simentioning

confidence: 81%

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

Reddy

Peterson

Vang

et al. 2011

Journal of Elec Materi

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This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm 9 4 cm to 8 cm 9 8 cm on CdZnTe without sacrificing the quality of the layers are described. Extremely high compositional uniformity and low macrodefect density were achieved for single-and two-color HgCdTe layers on both Si and CdZnTe substrates. Finally, a few examples of detector and focal-plane array results are included to highlight the importance of high compositional uniformity and uniformly low macrodefect density of the epitaxial layers in obtaining high operability and low cluster outages in single-and two-color focal-plane arrays (FPAs).

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Section: Hgcdte On Simentioning

confidence: 81%

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

Reddy

Peterson

Vang

et al. 2011

Journal of Elec Materi

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“…Median NEDT and operability for the Si-based FPA are slightly inferior to those for the CdZnTe FPA. 5 The tail in the distribution at higher NEDT values is typical of FPAs on Si. The extent of the tail, and the concomitant operability value, vary according to device design, temperature, bias, etc., but the effect is seen in FPAs from a variety of manufacturers.…”

Section: Resultsmentioning

confidence: 98%

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Bubulac

Benson

Jacobs

et al. 2011

Journal of Elec Materi

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A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is the close agreement between the aerial density of discrete species (particles, contamination spots, crystalline defects on Si surface) in various interfaces in the HgCdTe/CdTe/Si structure and the density of failed pixels in the array. The density of discrete species is acquired by applying a newly developed variation of the secondary-ion mass spectrometry (SIMS) depth-profiling technique to samples that have been deuterated to enhance detection. A mechanism of selective activation of threading dislocations in a HgCdTe layer on Si is proposed to link discrete species with failed detector pixels.

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“…In addition to the successful demonstration of single color IRFPA on composite HgCdTe/Si substrates, researchers produced MWIR/LWIR dual band FPAs on large area Si substrates. The device structure is based on a triple-layer N-P-N heterojunction (TLHJ) architecture grown by molecular-beam epitaxy (MBE) on 100 mm (211) Si wafers with ZnTe and CdTe buffer layers [62]. The MWIR/LWIR dual band epitaxial wafers have low macro defect densities (<300 cm -2 ).…”

Section: Hgcdte On Silicon Two-color Irfpasmentioning

confidence: 99%

“…The measured 80 K cutoff wavelengths are 5.5 µm for MWIR and 9.4 µm for LWIR, respectively. The FPAs exhibit high pixel operabilities in each band, with noise equivalent differential temperature (NEDT) operabilities of 99.98% for the MWIR band and 99.6% for the LWIR band at 84 K [62].…”

Section: Hgcdte On Silicon Two-color Irfpasmentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

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This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

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High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs

Cited by 12 publications

References 10 publications

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Advances in Infrared Detector Array Technology

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