High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe4)2I

Cheng, Jiaxin; An, Chao; Li, Liang; Chen, Lijie; Cui, Yana; Yan, Qijie; Yin, Yanling; Zhou, Weichang; Peng, Yuehua; Wang, Weike; Tang, Dongsheng

doi:10.1063/5.0064641

Cited by 10 publications

(16 citation statements)

References 32 publications

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“…In our opinion our results provide a possible explanation for the good photo-response behavior of the material. A recent work has shown that photocurrent is generated by photo-bolometric effect upon illumination with visible (683 nm) and infrared light (980 nm) with fluences comparable to the ones used in our study [33]. The performances of (TaSe 4 ) 2 I are found to be comparable or even better than other materials used as IR photodetectors.…”

Section: Ultrafast Dynamics Of the Transient Changes In The Band Disp...supporting

confidence: 68%

“…Therefore, light can be used to melt the CDW order in (TaSe 4 ) 2 I and this could be combined with ultrafast transport measurements to access the topological phase transition. Finally, our observation of an optically-induced increase in spectral weight at E F shines light on the microscopic mechanisms responsible for the high performances of (TaSe 4 ) 2 I as a near-infrared photodetector [33].…”

Section: Discussionmentioning

confidence: 64%

“…Spectral changes occur on two greatly different temporal regimes: we observe an ultrafast component on the sub-ps time scale, and a shift persisting up to the µs time scale, signaling an increased lattice temperature. The optically induced increase of the spectral weight at E F could explain the high performances of (TaSe 4 ) 2 I as a material for broadband near-infrared photodetectors [33].…”

Section: Introductionmentioning

confidence: 98%

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Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

et al. 2022

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Collective modes are responsible for the emergence of novel quantum phases in topological materials. In the quasi-one dimensional Weyl semimetal $\mathrm{(TaSe_4)_2I}$, a charge density wave (CDW) opens band gaps at the Weyl points, thus turning the system into an axionic insulator. Melting the CDW would restore the Weyl phase, but 1D fluctuations extend the gapped regime far above the 3D transition temperature (T$_{CDW}$ = 263 K), thus preventing the investigation of this topological phase transition with conventional spectroscopic methods. Here we use a non-equilibrium approach: we perturb the CDW phase by photoexcitation, and we monitor the dynamical evolution of the band structure by time- and angle-resolved photoelectron spectroscopy (trARPES). We find that, upon optical excitation, electrons populate the linearly dispersing states at the Fermi level (E$_\mathrm{F}$), and fill the CDW gap. The dynamics of both the charge carrier population and the band gap renormalization (BGR) show a fast component with a characteristic time scale of a few hundreds femtoseconds. However, the BGR also exhibits a second slow component on the $\mathrm{\mu}$s time scale. The combination of an ultrafast response and of persistent changes in the spectral weight at E$_\mathrm{F}$, and the resulting sensitivity of the linearly dispersing states to optical excitations, may explain the high performances of $\mathrm{(TaSe_4)_2I}$ as a material for broadband infrared photodetectors.

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Section: Ultrafast Dynamics Of the Transient Changes In The Band Disp...supporting

confidence: 68%

Section: Discussionmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 98%

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Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

et al. 2022

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“…In the meanwhile, the response is also fast, represented by short response time, namely τrise = 430 ms and τdecay = 414 ms for 1310 nm and τrise = 354 ms and τdecay = 345 ms for 1550 nm. These values are shorter than the response time of other IR materials, including Ta2NiSe5 [43], VO2 [44] and Ta2Se8I [37]. This result is of great significance because the pronounced response to 1310 nm and 1550 nm suggests promising applications in optical communications and fiber optic cable testing in O band and C band.…”

Section: Resultsmentioning

confidence: 91%

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta₂Ni₃Se₈

Zhen¹,

Miao²,

Zhu³

et al. 2022

J. Phys.: Condens. Matter

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In this paper, we report the synthesis of high-quality Ta2Ni3Se8 single crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with remarkable performance parameters including relatively high photoresponsivity (10 mA W-1) and specific detectivity (3.5 × 107 Jones) and comparably short response time (τrise = 433 ms, τdecay = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.

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“…Recently, (TaSe 4 ) 2 I nanowire was reported with high responsivity of 0.792 A W −1 at near-infrared region, [23] but the research including photoresponse mechanism was still at an infant stage. Additionally, low-noise current level characteristics at dark state were observed in (TaSe 4 ) 2 I nanoribbons recently, [24] which would be benefit for obtaining high detectivity in photodetection application.…”

Section: Introductionmentioning

confidence: 99%

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi‐1D Pseudogap System (TaSe₄)₂I

Li,

et al. 2023

Advanced Science

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Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid‐wave infrared (MWIR) and long‐wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra‐broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi‐1D pseudogap (PG) system (TaSe4)2I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W−1) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time‐resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high‐performance uncooled MWIR and LWIR detection by using quasi‐1D PG materials.

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High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe4)2I

Cited by 10 publications

References 32 publications

Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta₂Ni₃Se₈

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi‐1D Pseudogap System (TaSe₄)₂I

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High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe4)2I

Cited by 10 publications

References 32 publications

Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe4)2I

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi‐1D Pseudogap System (TaSe4)2I

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Resources

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Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta₂Ni₃Se₈

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi‐1D Pseudogap System (TaSe₄)₂I