High-performance near-infrared PtSe2/n-Ge heterojunction photodetector with ultrathin Al2O3 passivation interlayer

Zhu, Qinghai; Chen, Yexin; Zhu, Xiaodong; Sun, Yijun; Cheng, Zhiyuan; Xu, Jing; Xu, Mingsheng

doi:10.1007/s40843-022-2402-3

Cited by 16 publications

(2 citation statements)

References 59 publications

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“…Recently, the high performance of those pn-junction PDs based on the two-dimensional (2D) TMDs/three-dimensional (3D) semiconductor heterostructures, such as PtSe 2 /Si, PtSe 2 /Ge, and PtSe 2 /GaAs, has been well demonstrated. − For instance, Ye et al reported a self-driven PtSe 2 /Si pn PD with an ultrathin SiO 2 layer at the heterojunction interface, in which the PtSe 2 film exhibits a polycrystalline structure . It shows excellent responsivity, a rapid response time of 14.1/15.4 μs, and a 3 dB frequency of 30 kHz.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂

Ji,

Ke,

et al. 2024

ACS Photonics

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Platinum diselenide (PtSe2), which is a member of transition metal dichalcogenides (TMDs), has aroused significant attention as a promising candidate for high-performance photodetection, owing to its distinctive properties and tunable interlayer band gap. However, the growth of the single-crystal PtSe2 film remains a challenge, while the two-dimensional (2D)/three-dimensional (3D) heterojunction photodetector (PD) based on PtSe2 is generally fabricated by directly combining the film with the substrate. Here, we report an effective method for synthesizing 2 in. single-oriented PtSe2 films in a large diameter cavity by thermally assisted conversion (TAC). Meanwhile, a kind of PD based on the PtSe2/n–-Si/n+-Si pin structure is proposed for the first time. For comparison, other PDs based on the PtSe2/Si pn structure are also fabricated. The pin device exhibits a 3 dB frequency of ∼125 kHz, a response speed of 2.2/11.8 μs under the illumination at 532 nm, and a good response under the illumination at 1310, 1550, 1850, and 2200 nm for infrared image sensing. It has been demonstrated that the shorter carrier transit time and better control ability of the electric field can be responsible for the outstanding performance of the pin device. This work provides a potential to develop Si-based integrated optoelectronics with an ultrafast response and a guideline for designing the next-generation pin PD based on 2D materials.

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Section: Introductionmentioning

confidence: 99%

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂

Ji,

Ke,

et al. 2024

ACS Photonics

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“…The trend of arrayed detectors has emerged and continues to expand in scale ( 14 – 16 ), but it remains limited to the visible spectrum due to wide bandgaps. Arrayed noble metal dichalcogenides with narrow bandgaps can be obtained by direct selenization ( 17 ) and tellurium-vapor transformation ( 18 ) methods. However, the materials obtained by such methods are generally polycrystalline along with abundant defects, which affects the performance and uniformity.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging

Xu,

Zhong,

Wang

et al. 2024

Sci. Adv.

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Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants, guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously perform radiation sensing to improve efficiency. Room temperature van der Waals (vdWs) photodetectors without lattice matching have evolved rapidly with optimized stacking methods, primarily for single-pixel devices. The urgent need to implement arrayed devices aligns with practical demands. Here, we present an 8 by 1 black phosphorus/molybdenum sulfide (BP/MoS 2 ) vdWs photodetector linear array with a fill-factor of ~77%, fabricated using a temperature-assisted sloping transfer method. The flat interface and uniform thickness facilitate carrier transport and minimize pixel nonuniformities, showing an average peak detectivity ( D * ) of 2.34 × 10 9 cm·Hz 1/2 ·W −1 in the mid-wave infrared region. Compared to a single pixel, push-broom scanning passive imaging is eight times more efficient and further enhanced through mean filtering and fast Fourier transform filtering for strip noise correction. Our study offers guidance on vdWs arrayed devices for engineering applications.

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Dual‐Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity

Fu,

Yang,

Wang

et al. 2024

Advanced Materials

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High‐performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges of miniaturization and integration in advanced technologies. Despite the inherent difficulties of incorporating dual functionality within a single device, a high‐performance, dual‐mode device is reported. This device integrates an ultra‐thin Al2O3 passivation layer with a PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection and neuromorphic operation. In mode 1, the device efficiently separates photo‐generated electron‐hole pairs, exhibiting an ultra‐wide spectral response from ultraviolet (265 nm) to near‐infrared (1650 nm) wavelengths. It also reproduces high‐quality images of 256 × 256 pixels, achieving a Q‐value as low as 0.00437 µW cm−2 at a light intensity of 8.58 µW cm−2. Meanwhile, when in mode 2, the as‐assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual‐function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications.

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High-performance near-infrared PtSe2/n-Ge heterojunction photodetector with ultrathin Al2O3 passivation interlayer

Cited by 16 publications

References 59 publications

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂

Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging

Dual‐Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity

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High-performance near-infrared PtSe2/n-Ge heterojunction photodetector with ultrathin Al2O3 passivation interlayer

Cited by 16 publications

References 59 publications

High-Speed Broadband PtSe2/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe2

High-Speed Broadband PtSe2/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe2

Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging

Dual‐Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity

Contact Info

Product

Resources

About

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂

High-Speed Broadband PtSe₂/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe₂