High-performance nonvolatile Al/AlO_x/CdTe:Sb nanowire memory device

Abstract

Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlO(x)/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 10⁶, with a retention time of 3 × 10⁴ s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ∼0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlO(x)/CdTe:Sb NW heterojunction after controlled Ar⁺ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlO(x) film. This Al/AlO(x)/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

“…This voltage range is similar to previous reports of nanowire RRAM devices. [56] The polarity dependent memory switching describes the bipolar process whereby a conducting filament (CF) must bridge the crystalline core of the wire and the metal contact through the insulating oxide shell.…”

“…Memory device studies on oxide coated II-VI semiconductor nanowire materials have also shown trapping of electrons by O vacancies to be the responsible mechanism. [56] SCLC conduction has been observed in a wide range of materials, it is commonly accepted that the defect-related traps, e.g., O vacancies contribute to the SCLC conduction. [60] Other conduction mechanisms such as Schottky and Poole-Frenkel (PF) emission were also investigated through plots of log (I/V) versus √V and log(I) versus √V (Figure S17A, S17B).…”

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

“…This RS is based on the electrochemical formation of arguably the one by Hickmott in 1962 [70] . Materials for non-volatile unipolar and/or bipolar RS include; (1) simple binary metal oxides (usually off-stoichiometry) such as SiO 2-x [606] or metal doped SiO 2 (Ta:SiO 2 , Cu:SiO 2 , Pt:SiO 2 , Sn:SiO 2 , Zn:SiO 2 ) [605] , TiO 2-x [607] , [608] , [609] , HfO 2-x [610] , [611] , [612] , [613] , [614] , [615] , Ta 2 O 5-x [616] , [615] , [617] , [618] , Al 2 O 3-x [619] , [620] , ZnO x [621] , [622] , [623] , [624] , ZrO 2-x [625] , [626] , WO 3-x [627] , NiO x Hybrid organic-inorganic perovskites (HOIPs) (e.g. CH 3 NH 3 PbI 3−x Cl x ) [669] , [670] ).…”

Synthesis, Characterizations and Applications of Cadmium Chalcogenide Nanowires: A Review

“…So it is important to understand the fundamental mechanisms of impurity doping. Among the work on CdTe nanostructures doped by Zn [131][132][133] , Sb [9,134,135] , or Mn [136] , Sb has been proven to be an effective p-type dopant.…”