High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi&lt;sub&gt;2&lt;/sub&gt; Seed-Induced Lateral Crystallization

Park, Jae Hyo; Joo, Seung Ki

doi:10.1109/led.2014.2378791

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…Therefore, research focus has gradually shifted to active matrix organic light‐emitting diode (AMOLED), as they offer excellent and bright colors without backlighting, filters, or polarizers. However, commercial transparent AMOLEDs still require a rather complicated layout, comprising of an opaque, polycrystalline silicon‐based transistor backplane to drive the pixel's organic light‐emitting diode (OLED) entity . The best reported semitransparent displays of this kind to date show a transmittance of a mere 20% .…”

Section: Results Summary: Averages Were Taken From At Least Five Devimentioning

confidence: 99%

“…In effort to improve transparency in AMOLED device structure, a range of metal oxides‐based thin film transistor (TFT) backplanes have been used. These backplanes offer a higher aperture ratio (defined as the ratio of light emitting area over total pixel area) with two‐side emission capability, which could not be anticipated from conventional opaque polycrystalline silicon backplanes . Backplanes based on metal oxide TFTs provide reasonably high charge carrier mobility and transparency, but their processing temperatures (typically ≈500 °C) are incompatible with processing on plastic substrate materials .…”

Section: Results Summary: Averages Were Taken From At Least Five Devimentioning

confidence: 99%

“…However, commercial transparent AMOLEDs still require a rather complicated layout, comprising of an opaque, polycrystalline silicon-based transistor backplane to drive the pixel's organic light-emitting diode (OLED) entity. [1][2][3][4][5][6][7][8] The best reported semitransparent displays of this kind to date show a transmittance of a mere 20%. [ 7,8 ] This is mainly due to the limitation of semiconducting materials that do not absorb in the visible spectrum.…”

Section: Doi: 101002/adom201600050mentioning

confidence: 99%

“…These backplanes offer a higher aperture ratio (defi ned as the ratio of light emitting area over total pixel area) with two-side emission capability, which could not be anticipated from conventional opaque polycrystalline silicon backplanes. [4][5][6][7][8] Backplanes based on metal oxide TFTs provide reasonably high charge carrier mobility and transparency, but their processing temperatures (typically ≈500 °C) are incompatible with processing on COMMUNICATION furthermore exhibit excellent optical performance with a luminance of 675 cd m −2 at an EQE of 1.1% from the device's bottom side and 330 cd m −2 at an EQE of 0.6% from the topside.…”

Section: Doi: 101002/adom201600050mentioning

confidence: 99%

See 3 more Smart Citations

Semitransparent and Low‐Voltage Operating Organic Light‐Emitting Field‐Effect Transistors Processed at Low Temperatures

Ullah

Wawrzinek

Maasoumi

et al. 2016

Advanced Optical Materials

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CommuniCation plastic substrate materials. [4,5,[9][10][11][12][13][14] Therefore, development of all organics transparent AMOLEDs is attractive due to their unique features such as low temperature processing, compatibility with flexible substrate, ultrathin, and light weight all combined in two sided displays. [14,15] Organic light emitting field-effect transistors (LEFETs) offer a new approach to simplify fabrication of display pixels for which they combine OLED light emission with organic field-effect transistor (OFET) switching properties in one device. [12][13][14][16][17][18][19][20][21][22][23][24][25][26][27][28] Furthermore, the LEFETs device structure enables obtaining much higher aperture ratio (>80%) than conventional AMOLED pixels. [13,18] Over the past decade, LEFETs operating over the full range of the visible color spectrum have been reported employing a large number of light emitting and charge transporting materials. Although respectable optical and electrical device performance has been demonstrated, the remaining challenges still are: i) low voltage operation in LEFETs and ii) demonstration of semitransparent LEFETs. This is mainly due to constraint of semitransparent charge transporting semiconductors, dielectrics, and metal electrodes. High operating voltages in LEFETs (typically ≈100 V) hinder efficient powerto-light conversion since most of the applied power dissipates inside the device as thermal energy. For display application, a low operating voltage (<10 V) along with high external quantum efficiency (EQE) is desired. Thus, development and integration of low-voltage operating LEFETs incorporating semitransparent semiconducting materials and metal electrodes are currently required in order to address the challenging tasks toward nextgeneration circuitry for displays.Here, we demonstrate, for the first time, semitransparent LEFETs in combination with low operating voltages (<10 V) using only three active organic layers. The LEFETs were processed at low temperature (<100 °C) using 2-decylbenzo [b] benzo [4,5]thieno[2,3-d]thiophene (BTBT-C 10 ) as a highly transparent, hole transporting organic layer (synthesised according to literature, [29,30] see the Supporting Information for the details), and the deep-blue emitter 9-(9-phenylcarbazole-3-yl)-10-(naphthalene-1-yl)anthracene (PCAN) as the emissive layer. The semitransparent electrodes were ITO, MoOx/Au, and 1,3,5,-tris(2-N-phenylbenzimidazolyl)benzene (TPBI)/Cs 2 CO 3 / Ag, which were used as gate, hole injecting, and electron injecting electrodes, respectively. The LEFETs operate in p-type mode with mobilities up to 2.6 cm 2 V −1 s −1 and current ON/ OFF ratios of >10 4 . As such values have been achieved only in hybrid-LEFETs thus far, this hole mobility is the highest among all reported all-organic LEFETs to date. [16][17][18][19][20][21][22][23][24][25][26][27][28]31] The LEFETs

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Section: Results Summary: Averages Were Taken From At Least Five Devimentioning

confidence: 99%

Section: Results Summary: Averages Were Taken From At Least Five Devimentioning

confidence: 99%

Section: Doi: 101002/adom201600050mentioning

confidence: 99%

Section: Doi: 101002/adom201600050mentioning

confidence: 99%

See 2 more Smart Citations

Semitransparent and Low‐Voltage Operating Organic Light‐Emitting Field‐Effect Transistors Processed at Low Temperatures

Ullah

Wawrzinek

Maasoumi

et al. 2016

Advanced Optical Materials

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show abstract

Probing of the influence of bilayer geometry, substrate temperature and post-deposition annealing on Si and Cr thin film interdiffusion through Raman spectroscopy

Naidu,

Mohiddon,

Krishna

2022

Bull Mater Sci

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Towards manufacturing high uniformity polysilicon circuits through TFT contact barrier engineering

Sporea

Wheeler

Stolojan

et al. 2018

Sci Rep

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The predicted 50 billion devices connected to the Internet of Things by 2020 has renewed interest in polysilicon technology for high performance new sensing and control circuits, in addition to traditional display usage. Yet, the polycrystalline nature of the material presents significant challenges when used in transistors with strongly scaled channel lengths due to non-uniformity in device performance. For these new applications to materialize as viable products, uniform electrical characteristics on large areas will be essential. Here, we report on the effect of deliberately engineered potential barrier at the source of polysilicon thin-film transistors, yielding highly-uniform on-current (<8% device-to-device, accounting for material, as well as substantial geometrical, variations). The contact-controlled architecture of these transistors significantly reduces kink effect and produces high intrinsic gain over a wide range of drain voltage (2–20 V). TCAD simulations associate critical grain boundary position and the two current injection mechanisms in this type of device, showing that, for the geometry considered, the most unfavorable location is ~150 nm inside the source area. At this point, grain boundary contributes to increasing the resistance of the source pinch-off region, reducing the current injection from the bulk of the source area. Nevertheless, the effect is marginal, and the probability of a grain boundary existing at this position is low. This new understanding is instrumental in the design of new signal conversion and gain circuits for flexible and low-power sensors, without the need for complex compensation methods.

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High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi<sub>2</sub> Seed-Induced Lateral Crystallization

Cited by 4 publications

References 9 publications

Semitransparent and Low‐Voltage Operating Organic Light‐Emitting Field‐Effect Transistors Processed at Low Temperatures

Semitransparent and Low‐Voltage Operating Organic Light‐Emitting Field‐Effect Transistors Processed at Low Temperatures

Probing of the influence of bilayer geometry, substrate temperature and post-deposition annealing on Si and Cr thin film interdiffusion through Raman spectroscopy

Towards manufacturing high uniformity polysilicon circuits through TFT contact barrier engineering

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