Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.

Although many nanoscale materials such as quantum dots and metallic nanocrystals exhibit size dependent optical properties, it has been difficult to incorporate them into optical or electronic devices because there are currently no methods for precise, large‐scale deposition of single nanocrystals. Of particular interest is the need to control the orientation of single nanocrystals since the optical properties are usually strongly anisotropic. Here a method based on electrophoretic deposition (EPD) is reported to precisely assemble vertically oriented, single gold nanorods. It is demonstrated that the orientation of gold nanorods during deposition is controlled by the electric dipole moment induced along the rod by the electric field. Dissipative particle dynamics simulations indicate that the magnitude of this dipole moment is dominated by the polarizability of the solution phase electric double layer around the nanorod. The resulting vertical gold nanorod arrays exhibit reflected colors due to selective excitation of the transverse surface plasmon mode. The EPD method allows assembly of arrays with a density of over one million, visually resolvable, vertical nanorods per square millimeter.

CommuniCation plastic substrate materials. [4,5,[9][10][11][12][13][14] Therefore, development of all organics transparent AMOLEDs is attractive due to their unique features such as low temperature processing, compatibility with flexible substrate, ultrathin, and light weight all combined in two sided displays. [14,15] Organic light emitting field-effect transistors (LEFETs) offer a new approach to simplify fabrication of display pixels for which they combine OLED light emission with organic field-effect transistor (OFET) switching properties in one device. [12][13][14][16][17][18][19][20][21][22][23][24][25][26][27][28] Furthermore, the LEFETs device structure enables obtaining much higher aperture ratio (>80%) than conventional AMOLED pixels. [13,18] Over the past decade, LEFETs operating over the full range of the visible color spectrum have been reported employing a large number of light emitting and charge transporting materials. Although respectable optical and electrical device performance has been demonstrated, the remaining challenges still are: i) low voltage operation in LEFETs and ii) demonstration of semitransparent LEFETs. This is mainly due to constraint of semitransparent charge transporting semiconductors, dielectrics, and metal electrodes. High operating voltages in LEFETs (typically ≈100 V) hinder efficient powerto-light conversion since most of the applied power dissipates inside the device as thermal energy. For display application, a low operating voltage (<10 V) along with high external quantum efficiency (EQE) is desired. Thus, development and integration of low-voltage operating LEFETs incorporating semitransparent semiconducting materials and metal electrodes are currently required in order to address the challenging tasks toward nextgeneration circuitry for displays.Here, we demonstrate, for the first time, semitransparent LEFETs in combination with low operating voltages (<10 V) using only three active organic layers. The LEFETs were processed at low temperature (<100 °C) using 2-decylbenzo [b] benzo [4,5]thieno[2,3-d]thiophene (BTBT-C 10 ) as a highly transparent, hole transporting organic layer (synthesised according to literature, [29,30] see the Supporting Information for the details), and the deep-blue emitter 9-(9-phenylcarbazole-3-yl)-10-(naphthalene-1-yl)anthracene (PCAN) as the emissive layer. The semitransparent electrodes were ITO, MoOx/Au, and 1,3,5,-tris(2-N-phenylbenzimidazolyl)benzene (TPBI)/Cs 2 CO 3 / Ag, which were used as gate, hole injecting, and electron injecting electrodes, respectively. The LEFETs operate in p-type mode with mobilities up to 2.6 cm 2 V −1 s −1 and current ON/ OFF ratios of >10 4 . As such values have been achieved only in hybrid-LEFETs thus far, this hole mobility is the highest among all reported all-organic LEFETs to date. [16][17][18][19][20][21][22][23][24][25][26][27][28]31] The LEFETs

Bulk heterojunction (BHJ) organic solar cells and photodiodes require optimised active layer structures for both charge carrier photo-generation and extraction to occur efficiently.