High performance pMOS circuits with silicon-on-glass TFTs

Kim, Jae Ik; Choi, Jae Won; Mativenga, Mallory; Jang, Jin; Williams, Carlo Kosik; Wang, Chuan Che; Mozdy, E.; Cites, Jeffrey S.; Lai, Jackson; Tredwell, T.J.

doi:10.1016/j.sse.2009.10.001

Cited by 12 publications

(10 citation statements)

References 9 publications

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“…It corresponds to a total propagation delay of 2.54 ns/stage. This CMOS propagation delay time is less than 2.61 ns reported for the SiOG PMOS inverter with V DD = 10 V. 8 We also fabricated a dynamic shift register using CMOS SiOG TFTs. Figure 4a shows the schematic of the dynamic shift register.…”

Section: Figure 2amentioning

confidence: 79%

Low Voltage-Driven CMOS Circuits Based on SiOG

Choi

Park

et al. 2011

Electrochem. Solid-State Lett.

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The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n-and p-channel thin-film transistors ͑TFTs͒ based on the silicon-on-glass ͑SiOG͒ substrate was studied. The manufacturing process of n-and p-channel TFTs was the same as that of low temperature poly-Si. The field-effect mobilities of n-and p-channel TFTs fabricated in SiOG are 226 and 165 cm 2 /V s, respectively. The TFTs exhibited a symmetric threshold voltage of Ϯ1.1 V and a gate voltage swing of 0.21-0.23 V/dec. The total propagation delay time of the complementary metal oxide semiconductor ͑CMOS͒ inverter was 2.54 ns at a supply voltage of 7 V. In addition, the rise and fall times of the shift register were found to be 0.5 and 0.7 s at a V DD of 7 V, respectively.Low temperature, polycrystalline-silicon ͑LTPS͒ thin-film transistors ͑TFTs͒ on glass continue to generate interest because of their applications in integrated circuits for active-matrix liquid-crystal displays and organic light-emitting diode displays. 1 Sequential lateral solidification 2 and continuous grain silicon, technologies were developed to yield TFTs with higher field-effect mobility compared to the excimer laser-annealed ͑ELA͒ poly-Si TFTs. Unfortunately, grain boundaries remain in these LTPS, which have adverse effects on mobility and performance uniformity, hence making them less ideal for uniform, high speed integrated circuitry.To avoid the grain boundaries in the TFT channel region, several attempts have been made to transfer single-crystalline Si layers to glass substrates, including the Corning silicon-on-glass ͑SiOG͒ substrate. 3 Previous studies comparing p-channel metal oxide semiconductor ͑PMOS͒ circuits built in SiOG and ELA LTPS substrates showed the response time of the circuits built in SiOG to be approximately four times faster. 4,5 Realizing that circuits that employ only p-channel TFTs are plagued by large power consumption, low maximum operation frequency, and large space occupancy, complementary metal oxide semiconductor ͑CMOS͒ circuits became the obvious path to mitigate the PMOS process shortcomings. In this work, the operation of CMOS TFTs fabricated on SiOG is investigated and compared to PMOS results from previous work. ExperimentalThe detailed fabrication process for SiOG appears in a literature by Gadkaree et al. 6 Figure 1 shows the processing steps for the SiOG TFTs; a dry etching was used on the SiOG film to reduce the thickness of Si layer down to 50 nm using plasma composed of a mixture of NF 3 , H 2 , and Cl 2 , as shown in Fig. 1a and b. The variation in the resultant Si film thickness from the NF 3 /Cl 2 /H 2 plasma etch was ϳ1.05%. 7 The Si layer was defined to form active islands by dry etching as shown in Fig. 1c. A 100-nm-thick SiO 2 layer was deposited by plasma-enhanced chemical vapor deposition on SiOG as a gate insulator. Then, 200-nm-thick Mo was deposited and patterned as the gate metal, as shown in Fig. 1d. The p-channel TFT regions are covered with a photoresist, and the self-aligned source and drai...

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Section: Figure 2amentioning

confidence: 79%

Low Voltage-Driven CMOS Circuits Based on SiOG

Choi

Park

et al. 2011

Electrochem. Solid-State Lett.

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“…V DD and V HIGH of the input signal are both 7.01 V. V SS and V LOW are 0 V. The output load of the measurement circuit has a capacitance of 3 pF and resistance of 1 MΩ. The rise and fall times are 0.4 and 0.7 μs respectivelysignificantly faster than the 2.8 μs and 1.4 μs rise and fall time reported for the PMOS SiOG shift register(7).…”

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confidence: 86%

Low Voltage Driven CMOS Circuits Based on Silicon on Glass

Choi¹,

Choi

Park

et al. 2010

ECS Trans.

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Low voltage driven inverter, ring oscillator and shift registor circuits using n-and p-channel TFTs based on Corning® Siliconon-Glass (SiOG) substrates are studied. The field effect mobility of n-and p-channel TFTs fabricated in SiOG are 226 and 165 cm 2 /V·s, respectively. The TFTs exhibited symmetric threshold voltages of ± 1.1 V and gate voltage swings of 0.21 ~ 0.23 V/dec. The total propagation delay time of the CMOS inverter was 2.54 ns at a supply voltage of 7 V. In addition, the rise and fall times of the shift register were found to be 0.5 µs and 0.7 µs at a V DD of 7 V, respectively. This work demonstrates the the ability to realize high performance integrated CMOS circuits on SiOG substrates.

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“…To fabricate high-performance Si-based TFT on glass substrate, various low-temperature process technologies have been studied. [13][14][15][16][17][18][19][20][21][22][23][24][25] However, in the conventional Si-based TFT process for display application, most of the area of the Si films deposited on the glass substrate (except the regions containing TFTs) is removed by etching. The efficiency of silicon usage (hereafter, material-use efficiency) of silicon is therefore very low.…”

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confidence: 99%

A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser

Sakaike

Kobayashi

Nakamura

et al. 2014

Jpn. J. Appl. Phys.

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A technique for local layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films with midair cavity induced by near-infrared semiconductor diode laser (SDL) irradiation is demonstrated. After SDL irradiation, the silicon (Si) films were completely transferred and crystallized simultaneously on counter substrates. Electron backscatter diffraction pattern maps confirmed that the maximum grain size of the transferred Si films is 20 µm. High-performance polycrystalline Si thin-film transistors (TFTs) were successfully fabricated on the locally transferred Si films. These TFTs showed a high on/off ratio of more than 106 and a field-effect mobility as high as 492 cm2 V−1 s−1.

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High performance pMOS circuits with silicon-on-glass TFTs

Cited by 12 publications

References 9 publications

Low Voltage-Driven CMOS Circuits Based on SiOG

Low Voltage-Driven CMOS Circuits Based on SiOG

Low Voltage Driven CMOS Circuits Based on Silicon on Glass

A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser

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