High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe₂van der Waals heterojunction with strong interlayer transition

Abstract

In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without in conjunction of filters and polarizers. However, owing to low linear dichroism ratio and insufficient...

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi2O2Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels

“…e) Corresponding responsivity and detectivity of the device under varying light intensities. f) Photovoltaic responsivity, detectivity, and h) rise and decay time of typical state‐of‐the‐art low‐dimensional semiconductor‐based photodetectors reported in literature such as GaSe/MoS 2 , [ 43 ] Te/Ge, [ 44 ] PtSe 2 /GaAs, [ 34 ] WSe 2 /Bi 2 O 2 Se, [ 17 ] GeSe/MoS 2 , [ 43 ] Te/InSe, [ 45 ] MoTe 2 /Si, [ 46 ] Te/ZnO, [ 47 ] Se/InSe, [ 48 ] Ti 3 C 2 T x Mxene/GaN, [ 49 ] PtSe 2 /GaAs, [ 34 ] Te/WS 2 , [ 30 ] Te/MoSe 2 , [ 50 ] and Se/InSe. [ 51 ]…”

Polarization‐Resolved p‐Se/n‐WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

“…[3][4][5][6][7] Through the construction of van der Waals heterojunctions (vdWH) composed of anisotropic materials such as Te/MoSe 2 and BP/WSe 2 , the type-II band alignment or built-in electric field at p-n interface can result in the self-powered and polarization-sensitive photodetections. [8][9][10] Optical microcomputer control systems (OMCS) are widely applied in our lives, such as space exploration, distance measurement, and positioning systems. [11][12][13] However, the general photodetector acting as a signal generator in the OMCS can merely obtain light intensity information and require an external power supply, which can increase the complexity and instability of circuit design, limiting the wide applications with low-power consumption.…”

“…[ 3–7 ] Through the construction of van der Waals heterojunctions (vdWH) composed of anisotropic materials such as Te/MoSe 2 and BP/WSe 2 , the type‐II band alignment or built‐in electric field at p–n interface can result in the self‐powered and polarization‐sensitive photodetections. [ 8–10 ]…”

Pulsed‐Laser‐Deposition Fabricated ZnIn2S4 Photodetectors with Excellent ON/OFF Switching Characteristics toward High‐Temperature‐Resistant Photodetection Applications

“…[2][3][4][5] However, photodetectors based on traditional 2DLMs also suffer from some tough challenges. To begin with, the 2D devices are commonly constructed by uncontrollable methods and typically only a single prototype device is available in most of the previous studies, [6][7][8][9][10][11] while the preparation of multiple optoelectronic devices within one chip has been challenging to realize yet, especially for the common micro-mechanical exfoliation and chemical vapor deposition (CVD) methods. However, onchip integration is an indispensable precondition for practical engineering applications.…”