Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi₂O₂Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels

Abstract

Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi 2 O 2 Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi 2 O 2 Se type-II diodes show a high rectification ratio of 3.6 × 10 4 . Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W −1 (100 mV bias) and 768.8 mA W −1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.

Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity

“…Most of these theories are explained by the existence of recombination centers of different energies and capture cross-sections according to the previous literature reports. 39,41–43 Focusing on this PtS 2 /MoS 2 device, to the best of our knowledge, the superlinear photocurrent and the increasing tendency of responsivity and detectivity (as shown in Fig. 6e) are principally determined by the key component of MoS 2 .…”

“…In other words, when θ = 0, the photocurrent is determined by the photogating effect referring to trap states, and when θ = 1, the photocurrent is dictated by the photoconductive effect. 39 The obtained value of 0.45 indicates the recombination action of these two effects. However, the obtained value of 1.17 demonstrates a superlinear behavior and the superlinear photocurrents are quite rare.…”

Mixed-Dimensional van der Waals Heterostructure for High-Performance and Air-Stable Perovskite Nanowire Photodetectors

“…(b) Responsivity of the devices as a function of incident light intensity under a bias of 2 V. (c) Measured noise power density of the devices. (d) Detectivity of the devices as a function of incident light intensity under a bias of 2 V. (e) Responsivity and detectivity of typical state-of-the-art 1D/2D mixed-dimensional heterostructure photodetectors reported in the literature, including GaAs/Gr, Se/InSe, GaAs/WSe 2 , Sb 2 Se 3 /WS 2 , Te/WS 2 , ZnO/MoS 2 , Se/ReS 2 , Te/Bi 2 O 2 Se, Te/MoTe 2 , GaAs/GaAs, and SbSI/PbI 2 . (f) Response speed of the hBN/Gr/CH 3 NH 3 PbI 3 device under a bias of 2 V.…”

One-Dimensional Atomic Chains for Ultimate-Scaled Electronics

“…Also, the ambipolar semiconducting Ta 2 Ni 3 Se 8 ACs, featured with the differential transconductance under positive/negative gate bias, can enable the higher data processing capability in a single device, thus significantly simplifying the circuit design. Based on the same concept, nanoscale ambipolar or anti-ambipolar optoelectronic devices with multifunctionality have been demonstrated most recently. , …”

“…Based on the same concept, nanoscale ambipolar or anti-ambipolar optoelectronic devices with multifunctionality have been demonstrated most recently. 73,74 1D TiS 3 is broadly classified as an n-type semiconductor with a direct bandgap of ∼1 eV. 75 The predicted mobility of TiS 3 is close to ∼10 4 cm 2 along the chain direction, more than an order of magnitude higher than that in the perpendicular direction, featuring an anisotropic carrier transport.…”