High Performance Polysilicon Thin Film Transistors

Abstract

Polysilicon TFT characteristics are shown to be dependent on the nature of the polysilicon film used as well as the TFT fabrication process. Best results were obtained when silicon self-implant and regrowth techniques were used together with plasma hydrogenation. TFTs exhibiting a mobility of 115 cm2/V-sec, subthreshold slope of 0.27 V/decade, leakage current below 0.01 pA/μ;m, and an on-off ratio of 10 orders of magnitude have been fabricated.