High‐Performance Printed Transistors Realized Using Femtoliter Gravure‐Printed Sub‐10 μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers

Kang, Hongki; Kitsomboonloha, Rungrot; Jang, Jaewon; Subramanian, Vivek

doi:10.1002/adma.201200924

Cited by 175 publications

(180 citation statements)

References 20 publications

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“…Recent studies have reported on OTFT devices fabricated entirely or partially with printing methods such as gravure printing, transfer printing, and inkjet printing. [6][7][8][9][10][11][12][13][14][15][16][17][18] However, the spatial resolution of these printing methods above is in the range of 10-100 µm, [19] which is not fine enough to fabricate short-channel high-speed OTFTs. Reverse offset printing is a unique method providing for high-resolution features, submicron in scale.…”

Section: Doi: 101002/aelm201700313mentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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OTFT technology has the potential to produce integrated circuits such as microprocessors [24] and amplifier circuits [25] with high mechanical flexibility. In particular, complementary integrated circuits combining both p-type and n-type OTFT devices possess many advantages including low power consumption in steady state operation, full-swing logic circuit output, and high noise margin. For these reasons, realizing complementary integrated circuits using reverse offset printing is highly desired, although the fabrication processes and device structures for them have not been fully established.In this study, we demonstrate organic complementary inverter circuits with a stacked structure using fully printed electrodes formed with reverse offset printing. Reverse offset printing and a silver nanoparticle inks sinterable at low temperature were adopted for the precise patterning of source, drain (S/D), and gate electrodes. The p-type and n-type semiconductor layers were also fabricated from solution, and exhibited effective mobilities of 0.41 and 0.2 cm 2 V −1 s −1 , respectively. The complementary inverter circuits using these OTFTs operated at a low supply voltage of 2.5 V with a gain of 14 and achieved high signal gain up to 25 at supply voltage 10 V.The silver (Ag) electrodes were patterned on a glass substrate using reverse offset printing with the process flow depicted in Figure 1a. There are three main steps in the reverse offset printing process: coating, patterning, and transfer. First, the silver ink was coated on the polydimethylsiloxane blanket with a slit coater (step 1: coating). Next, the unnecessary areas were removed from the blanket with a glass printing plate (step 2: patterning). Finally, the silver ink on the blanket was transferred to the substrate (step 3: transfer). Two kinds of silver nanoparticle inks sinterable at 120 °C were used for the source and drain (RAGT-36, DIC) and gate (RAGT-28, DIC) electrodes. Since the drying time between each step is an important factor for realizing high-resolution patterns, [22] the drying time was optimized for Ag nanoparticles. The thickness of the silver layers was controlled by the coating speed in the Step 1.The surface profile and the patterning resolution of the printed electrodes were evaluated using a stylus-type surface profiler (Dektak XT, Bruker) and an optical microscope. The cross-sectional profile (Figure 1b) indicates that the printed electrodes had uniform thicknesses of 100 nm, a flat top p-Type and n-type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High-performance OTFTs are fabricated using these electrodes and printed p-type and n-type organic semiconductors, each achieving a mobility of 0.2 cm 2 V −1 s −1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse o...

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Section: Doi: 101002/aelm201700313mentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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“…98 Kang et al, for example, utilize an optimized microgravure process to print silver patterns and poly(4-vinyl phenol) (PVP) dielectric layers. 99 A transistor with record transition frequencies of >300 kHz was achieved with a spin-coated organic semiconductor poly(2,5-bis(3-alkythiophen-2-yl)thieno [3,2-b] thiophene) (pBTTT).…”

Section: Thin Film Transistorsmentioning

confidence: 99%

Roll‐to‐Roll fabrication of large area functional organic materials

Søndergaard

Hösel

Krebs

2012

J Polym Sci B Polym Phys

963

743

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With the prospect of extremely fast manufacture of very low cost devices, organic electronics prepared by thin film processing techniques that are compatible with roll-toroll (R2R) methods are presently receiving an increasing interest. Several technologies using organic thin films are at the point, where transfer from the laboratory to a more production-oriented environment is within reach. In this review, we aim at giving an overview of some of the R2R-compatible techniques that can be used in such a transfer, as well the current status of R2R application within some of the existing research fields such as organic photovoltaics, organic thin film transistors, light-emitting diodes, polymer electrolyte membrane fuel cells, and electrochromic devices.

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“…Only a handful of reports on OFET alternating current (AC) characterization use fabrication techniques that even partially fulfi l the requirements set out above. [12][13][14][15][16][17][18][19][20][21][22][23] However to build functional fl exible circuits it is important to understand how to reconcile device fabrication and performance. [24][25][26] This is a requirement if plastic electronics are to be implemented in applications such as radio frequency identifi cation (RFID) tags which operate at megahertz frequencies.…”

Section: Doi: 101002/aelm201500024mentioning

confidence: 99%

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

Higgins

Muir

Wade

et al. 2015

Adv Elect Materials

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The processing of complex nanoscale electronic structures on plastic substrates is a significant challenge, requiring the combination of low temperature, nonaggressive, and high resolution methods. Here a scalable process flow on plastic is presented tbat enables the fabrication of flexible nanoimprinted organic field‐effect transistors (OFETs) with self‐aligned contacts and solution‐processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C. OFETs are fabricated with device cutoff frequencies f > 1 MHz at low operating bias V DS = −15 V. The technique allows the patterning of metal structures over four orders of magnitude from 375 nm to 1 mm without the need for a rigid carrier, and provides a fabrication pathway to high performance nanostructured organic circuitry.

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High‐Performance Printed Transistors Realized Using Femtoliter Gravure‐Printed Sub‐10 μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers

Abstract: COMMUNICATION Adv. Mater. 2012, 24, 3065-3069 using an Agilent 4156C semiconductor parameter analyzer. A standard f T measurement setup was used with a high impedance active probe, Picoprobe Model 18C with 20 fF input capacitance by GGB Industries Inc. to minimize coupling.

Cited by 175 publications

References 20 publications

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Roll‐to‐Roll fabrication of large area functional organic materials

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

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