High-performance self-powered ultraviolet photodetectors based on mixed-dimensional heterostructure arrays formed from NiO nanosheets and TiO<sub>2</sub> nanorods

Cao, Rui; Xu, Jianping; Shi, Shaobo; Chen, Jing; Liu, Ding; Bu, Yichen; Zhang, Xiaosong; Yin, Shougen; Li, Lan

doi:10.1039/d0tc01956a

Cited by 36 publications

(19 citation statements)

References 51 publications

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“…The value of α , obtained by fitting the curve of I ph versus P in Fig. 4 a, is related to the process of carrier capture, recombination and transfer [ 74 , 75 ]. The sublinear relation between I ph and P suggests the presence of the photogating effect in the device further [ 65 ].…”

Section: Resultsmentioning

confidence: 99%

“…The sublinear relation between I ph and P suggests the presence of the photogating effect in the device further [ 65 ]. The higher value of α (such as ~ 0.73) can be obtained when the lower power densities are applied due to reduced photocarrier recombination and the interactions between carriers [ 75 , 76 ]. In contrast, higher power densities can result in a degraded α value of ~ 0.55 because of stronger recombination losses and more trap states [ 77 ].…”

Section: Resultsmentioning

confidence: 99%

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The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Zhu

et al. 2021

Nanoscale Res Lett

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Zhu

et al. 2021

Nanoscale Res Lett

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“…This porous structure promotes the generation of electron-hole (e-h) pairs by facilitating light trapping. [13] Figure 3 shows the XRD patterns of SnO 2 -SL and SnO 2 -SL-NSs. The results indicate that the deposited n-SnO 2 layers exhibit four diffraction peaks located at 26.8, 34.15, 38.1, and 52.1, showing that the layers are polycrystalline in nature.…”

Section: Resultsmentioning

confidence: 99%

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Özel

Yıldız

2021

Physica Rapid Research Ltrs

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The development of high‐performance, self‐powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self‐powered PDs based on the p–n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO2 layer into the n‐SnO2/p‐Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W−1, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 × 1013 Jones at −5 V for 311 nm. Notably, the PDs possess self‐powered characteristics with an extremely high photoresponsivity of 208 mA W−1 and detectivity of 1.17 × 1012 Jones toward 311 nm without any power supply, suggesting their high potential for future energy‐efficient, self‐powered, high‐performance UV‐detecting application.

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“…The value of α, obtained by fitting the curve of Iph versus P in Fig. 4(a), is related to the process of carrier capture, recombination and transfer [65,66]. The sublinear relation between Iph and P suggests the presence of the photogating effect in the device further [61].…”

Section: Device Characterizationmentioning

confidence: 97%

“…The higher value of α (such as ~ 0.73) can be obtained when the lower power densities are applied due to reduced photocarrier recombination and the interactions between carriers[66,67]. In contrast, higher power densities can result in a degraded α value of ~ 0.55 because of stronger recombination losses and more trap states[68].…”

mentioning

confidence: 99%

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Li¹,

Zhu²,

Du³

et al. 2021

Preprint

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition (CVD) approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 x 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is adverse to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

show abstract

High-performance self-powered ultraviolet photodetectors based on mixed-dimensional heterostructure arrays formed from NiO nanosheets and TiO₂ nanorods

Abstract: The morphology and geometry of semiconductors will affect the photoresponse performance of mixed-dimensional heterojunction photodetectors (PDs).

Cited by 36 publications

References 51 publications

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

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High-performance self-powered ultraviolet photodetectors based on mixed-dimensional heterostructure arrays formed from NiO nanosheets and TiO2 nanorods

Abstract: The morphology and geometry of semiconductors will affect the photoresponse performance of mixed-dimensional heterojunction photodetectors (PDs).

Cited by 36 publications

References 51 publications

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W−1) based on SnO2 Nanostructures/Si Heterojunctions

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

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High-performance self-powered ultraviolet photodetectors based on mixed-dimensional heterostructure arrays formed from NiO nanosheets and TiO₂ nanorods

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions