2009
DOI: 10.1021/nn900704c
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High-Performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires for Transparent Thin-Film Transistors and Active Matrix Organic Light-Emitting Diode Displays

Abstract: We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobi… Show more

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Cited by 92 publications
(80 citation statements)
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“…The general defect chemistry of undoped TiO 2 treated under elevated temperature can be represented in terms of oxygen vacancies, titanium interstitials, and titanium vacancies according to the following equilibria [261,262]:…”
Section: Defect Chemistry In Tiomentioning
confidence: 99%
“…The general defect chemistry of undoped TiO 2 treated under elevated temperature can be represented in terms of oxygen vacancies, titanium interstitials, and titanium vacancies according to the following equilibria [261,262]:…”
Section: Defect Chemistry In Tiomentioning
confidence: 99%
“…The efficiency of the NW-AMOLED device was estimated to be $11 cd A À1 and the luminance $1630 cd m À2 within the active pixel area, corresponding to an average Recently, we have also demonstrated the fabrication of optically transparent NWTs and AMOLED displays using high-performance arsenic-doped In 2 O 3 nanowires [95]. The doping process here enhances the electrical performance of the In 2 O 3 nanowires, leading to n-type field-effect mobilities ranging from 1080 to 1490 cm 2 V À1 s À1 and I on /I off $5 Â 10 À6 for single wire transistors, when using a 50 nm atomic layer deposited Al 2 O 3 dielectric, ITO source and drain electrodes, and an ITO glass substrate.…”
Section: Transparent Nanowire Circuits and Displaysmentioning
confidence: 99%
“…Mismatch strain, Δ m,XRD , between adjacent layers in the asgrown T2SLs, as deduced from XRD. Biaxial modulus, M = E/1 −Μ, with E, Young's modulus and Îœ the Poisson's ratio of the (42). Residual in-plan strain as deduced from XRD, Δ in-plane,XRD , and from continuum mechanics modeling, Δ in-plane,CM .…”
Section: Resultsmentioning
confidence: 99%
“…Dry transfer to the new host was accomplished by a printing process. Release of PDMS stamps and thermal release tapes have been previously described (18,42). The target substrate was cleaned as described for the wet transfer.…”
Section: Methodsmentioning
confidence: 99%