High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector

Abstract

An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was designed to have a two-dimensional electron gas layer at the Al0.6Ga0.4N/Al0.5Ga0.5N hetero-interface, which plays an important role in increasing the photosensitivity. Additionally, for reducing the dark current, a V/Al/Mo/Au electrode was employed as a Schottky electrode with an appropriate barrier height. Upon irradiation with 10 μW/cm2, an extremely low dark current (10−11 A) and high photocurrent (5 × 10−5 A) were achieved at a bias voltage of 5 V. The photodetector was true solar-blind with a cut-off wavelength of 280 nm. A high photosensitivity of 106 A/W and a rejection ratio of 106 were realized under the irradiation of 10 nW/cm2 DUV photons. The present results revealed that the AlGaN/AlGaN MSM DUV photodetector is one of the most suitable candidates for an all solid-state photodetector with a performance superior to PMTs.

Ultrawide Band Gap Oxide Nanodots (Eg > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

“…Deep ultraviolet (DUV) detection plays an important role in people’s daily life, such as health monitoring, secure communication, and deep space exploration. − To meet this demand, ultrawide band gap semiconductors such as quartz, AlN, GaN, and Ga 2 O 3 and alloy materials (AlGaN and ZnMgO) have been used to fabricate DUV photodetectors. − Among those materials, β-Ga 2 O 3 (the band gap is 4.9 eV) is used as a very suitable DUV-sensitive material because of its excellent thermal and chemical stability and high visible light transparency. β-Ga 2 O 3 films have been used in extensively developed high-performance DUV photodetectors in the past few years. − However, the difference in the thermal expansion coefficient and the lattice mismatch between the β-Ga 2 O 3 film and the substrates make great impact on its crystal quality and device performance.…”

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

“…Edge TDs and suppression of leakage current using a surface passivation layer in MSM-based PDs have also been widely discussed [504,505] . Other than that, carrier collection mechanisms and influence of core threading dislocation in MSM-based PDs have recently been reported by Walde et al [506] . This work [507] .…”

Advances in Photoelectric Detection Units for Imaging Based on Perovskite Materials

“…Ultraviolet PDUs is a device for converting UV light signals into electrical signals, which is widely used in military, weather, medicine and other fields. [97][98][99] All-inorganic non-lead perovskite materials generally have a large optical bandgap and excellent response to UV light. At the same time, excellent stability in all aspects endows them a great value for research in imaging PDUs.…”