High‐Performance Solar Blind UV Photodetectors Based on Single‐Crystal Si/β‐Ga₂O₃ p‐n Heterojunction

Abstract

In this study, Si/β‐Ga2O3 solar‐blind photodetectors (PDs) have been demonstrated via micro‐transfer printing of a single crystalline Si pillar on β‐Ga2O3. Unlike other previous approaches for β‐Ga2O3 based heterojunction, this new single crystalline p‐n Si/β‐Ga2O3 heterojunction has a particle‐free heterointerface and does not show any sign of internal strain after the heterogeneous integration that is confirmed by Raman spectroscopy. As a result, PDs exhibit extremely high photoresponsivity (748 A W−1), quantum efficiency (3.67 × 105%), and UV/visible rejection ratio (≈105) under UV light illumination. This result is believed to provide a viable route for the realization of high‐performance solar‐blind photodetection systems, which form some of the most indispensable and important components in high‐performance next‐generation security, biomedical, and environmental monitoring systems. Also, the unique heterogeneous integration method allows us to realize a variety of β‐Ga2O3 based heterostructures that can further enhance the optical performances of β‐Ga2O3 based PDs.

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

“…UV photodetectors (PDs) have attracted enormous attention because of their versatile applications, such as missile warning, flame detection, bioaerosol detection, astronomical imaging, etc. [1][2][3][4] Extremely sensitive PDs, that have very high detectivity, D*, are required due to the strong atmospheric scattering of UV, especially for short-wavelength UV light. At present, photomultiplier tubes (PMTs) with very large D* values ranging up to D* = 4 × 10 14 cm Hz 1/2 W −1 are mainly employed to detect weak UV light signals.…”

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

“…These free-standing NMs can be transferred to any arbitrary foreign substrates by using elastomeric stamps, which was first demonstrated by Meitl et al [1] Importantly, these NMs are compatible with the traditional semiconductor manufacture approach for fabricating various heterogeneously integrated and flexible electronic devices, [2][3][4] including the seamless integration of semiconductor NMs with the low-cost, complementary-metal-oxidesemiconductor-compatible silicon (Si) substrates. Until now, several applications of transferrable monocrystalline NMs based on Si, [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] germanium (Ge), [4,21] gallium arsenide (GaAs)/aluminum gallium Single-crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes.…”

Emerging Opportunities in Lead-Free and Lead–Tin Perovskites for Environmentally Viable Photodetector Applications

“…High-performance photodetectors rely on photosensitive semiconducting layers that have (i) high charge carrier mobility, (ii) efficient light absorption over a wide spectral range, (iii) high photo-to-dark current ratio, (iv) negligible charge trapping, (v) long-term operational stability, and (vi) low-cost scalability. − With the emergence of wearable and surface-conforming electronics, mechanical flexibility is added to these critical factors . Commercial photodetectors use inorganic semiconductors such as gallium nitride (GaN), Si, and indium gallium arsenide (InGaAs) as the photosensitive layer, requiring sophisticated physical or chemical vapor deposition (CVD) techniques that translate to high fabrication costs. − These photodetectors also have a limited photosensitive spectral region, restrictively low operating temperatures (liquid nitrogen/helium temperature), and a reliance on amplifiers to enhance detectivity. , The most critical disadvantages are high brittleness and heavy weight, which reduce flexibility and portability, respectively.…”