High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing

Kang, Chan‐mo; Kim, Hoon; Oh, Yeon-Wha; Baek, Kyu‐Ha; Do, Lee‐Mi

doi:10.1109/led.2016.2545692

Cited by 32 publications

(29 citation statements)

References 18 publications

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“…However, this dramatic temperature reduction has not been accompanied by a corresponding reduction in film-processing time, which remains far greater (presently 1-2 h minimum) than acceptable for efficient, continuous additive manufacture, as in typical FAB lines. A noticeable exception is capital-intensive flash lamp annealing (FLA) for millisecond fabrication of silicon shallow junctions, which has recently been adapted to MO film growth (30)(31)(32). However, the high energy-density radiation pulses instantly generate temperatures >1,000°C at the film surface with very large temperature gradients downward.…”

mentioning

confidence: 99%

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Wang

Guo

Zeng

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2 V−1 s−1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.

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confidence: 99%

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Wang

Guo

Zeng

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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“…Since the conventional temperature measurement devices, such as thermocouples, rely on physical contact with the sample, measurement of temperature under FLA represent a significant challenge due to the short timescales involved during flashing. In order to eliminate this issue, optical‐based measurement techniques have been suggested . Alternatively, simulation‐based techniques can also be utilized to estimate the temperature range on the sample surface …”

Section: Flash Lamp Annealingmentioning

confidence: 99%

“…Kang et al used a surface thermometer and a 1D heat transfer model in order to estimate the temperatures during the FLA treatment . According to their simulation, the surface of the Si/SiO 2 substrate reached temperatures above 350 °C after the flash lamp irradiation with flashes featuring radiant energies of 207 J per pulse at a total irradiation time of 120 s with a fire rate of 15 Hz.…”

Section: Flash Lamp Annealingmentioning

confidence: 99%

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Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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“…Over the past few years, metal oxide semiconductors have attracted much attention because of their high charge carrier mobility, high optical transparency in the visible region, wide band gap, etc. [ 1 , 2 , 3 , 4 , 5 , 6 ]. Therefore, metal oxide thin film transistors (TFT) have wide application prospects in the next generation displays, such as transparent displays, 3-dimensional (3D) displays, and active-matrix organic light emitting diode displays (AMOLEDs) [ 3 , 4 , 5 , 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Wan

Lin

et al. 2018

Materials

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This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing

Cited by 32 publications

References 18 publications

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

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