High-Performance Solution-Processed La₂Ti₂O₇ Sensing Film for a Capacitive Electrolyte–Insulator–Semiconductor pH Sensor

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

“…20,57 To address this limitation, numerous studies have been conducted to enhance the sensitivity of ISFETs. [107][108][109][110][111][112][113] A higher sensitivity device is always desirable for both in-vivo and in-vitro systems. Several factors influence the sensitivity of a pH ISFET, including biorecognition layer and the transducer, 7 sensing channel material, 8 resident of hydroxyl group, measuring process and time, 114 processing parameters such as gas flow ratio, 115 fabrication process, 8,[114][115][116][117][118][119] pH sensor and interface unit, 117 parasitic effects (transconductance), 118 total surface-site density (N S ), 34,120,121 presence of oxygen on the surface and hydrogen content in silicon nitride sensitive films, 122 annealing conditions, 115,123 dielectric constant, 123,124 biasing regime of sensors and electrostatic screening of the analyte charges, 125 leakage current, 126,127 drift, 101,[128][129][130] depletion width, 131 capacitance of floating diffusion (FD), 132 scale length with gate oxide thickness.…”

Desenvolvimento de transistor de efeito de campo com porta estendida (EGFET) para quantificação da massa de fósforo removida de pacientes renais crônicos nas sessões de hemodiálise

“…Para as medidas de pH, o dispositivo EIS construído apresentou uma sensibilidade (182 mV/pH), que de acordo com a literatura [51], [100], [218], [219] está bem acima do limite de Nernst. O resultado obtido da sensibilidade extraída da curva V FB em função da concentração de fosfato (347 mV/mg/dL), mostrou a alta sensibilidade do dispositivo na detecção do íon fosfato em solução.…”