High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors With Low-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$k$ &lt;/tex-math&gt;&lt;/inline-formula&gt;/High-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$k$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Bilayer Gate Dielectric

Tang, Wei; Li, Jinhua; Zhao, Jiaqing; Zhang, Weimin; Yan, Feng; Guo, Xiaojun

doi:10.1109/led.2015.2462833

Cited by 60 publications

(28 citation statements)

References 12 publications

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“…Specifically, we have extracted a subthreshold swing of around 79 mV per decade and high on/off current ratio of about 10 5 . These values are among the best reported for low‐voltage organic transistors as can be observed from Figure , which compares the subthreshold swing for a range of reported low‐voltage devices prepared by various technologies …”

Section: Resultssupporting

confidence: 54%

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Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Haase

Zessin

Zoumboulis

et al. 2019

Adv Elect Materials

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With the prospect of realizing innovative technologies by large‐area fabrication at low cost and high throughput, printing and coating technologies are being intensively researched for the deposition of functional films. One promising coating technology is solution shearing, which has been studied as a deposition technique for organic semiconductors but not to a greater extent for dielectric layers. Therefore, the deposition by solution shearing of high‐quality poly(4‐vinylphenol) dielectrics is investigated, and the utility of these films as ultra‐smooth dielectric substrates for transistors is demonstrated. By comparing these films to those prepared by spin‐coating, it is possible to highlight the advantages of the technique. Specifically, thinner films with thicknesses as low as 11.4 nm but still low leakage and almost identical surface properties can be achieved. Thus, dielectric films with a very high capacitance of 280 nF cm‐2 are realized in a single coating step. Probing these films within organic transistors shows that they can facilitate operation at voltages as low as ‐1 V. Finally, it is shown how the use of a polymer‐small‐molecule–semiconductor blend can pave the way toward high‐performance, ultra‐low‐voltage devices from solution.

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Section: Resultssupporting

confidence: 54%

“…Attempts to reduce the operating voltages resulted in a few reports on solution‐processed dielectrics with thicknesses below 100 nm or various solution‐processed high‐k/low‐k combinations . However, spin coating is often applied during device fabrication even though it lacks scalability and is not compatible with R2R processes.…”

Section: Introductionmentioning

confidence: 99%

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Haase

Zessin

Zoumboulis

et al. 2019

Adv Elect Materials

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“…Organic dielectrics applied in OFETs are typically thicker than 200 nm because they are routinely deposited from solution by spin-coating, drop casting, or ink-jet printing, which result in low dielectric capacitance and subsequently in high operating voltage OFETs (V GS > AE20 V) [36,37]. Therefore, different methods have been used to overcome this problem including decreasing the gate dielectric thickness by depositing ultra-thin insulator films (d < 10 nm) [38,39], utilizing high-k organic insulator materials [40], or doing both at the same time [41]. In case of using high-k materials [36], several groups have successfully employed high dielectric constant organic insulators and significantly lowered the operation voltage of OFETs.…”

Section: Organic Dielectricsmentioning

confidence: 99%

High Capacitance Dielectrics for Low Voltage Operated OFETs

Mohammadian¹,

Majewski²

2020

Integrated Circuits/Microchips

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Low-voltage, organic field-effect transistors (OFETs) have a high potential to be key components of low-cost, flexible, and large-area electronics. However, to be able to employ OFETs in the next generation of the electronic devices, the reduction of their operational voltage is urgently needed. Ideally, to be power efficient, OFETs are operated with gate voltages as low as possible. To fulfill this requirement, low values of transistor threshold voltage (V t) and subthreshold swing (SS) are essential. Ideally, V t should be around 0 V and SS close to 60 mV/dec, which is the theoretical limit of subthreshold swing at 300 K. This is a very challenging task as it requires the gate dielectric thickness to be reduced below 10 nm. Here, the most promising strategies toward high capacitance dielectrics for low voltage operated OFETs are covered and discussed.

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“…As a result, the charge carrier transport in these devices takes place through the hopping mechanism and results in poor mobility [7]. Since, low field effect mobility is an intrinsic property, several new OSCs have been investigated for improving the mobility in OTFTs [8][9][10][11][12][13]. Mobility can be increased in OTFTs by tailoring the side chains, backbone networks of the OSCs [14].…”

Section: Introductionmentioning

confidence: 99%

Hybrid bilayer gate dielectric-based organic thin film transistors

Teja

Gupta

2019

Bull Mater Sci

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Organic thin film transistors (OTFTs) are key building blocks for flexible, low cost electronics systems. They provide a viable alternative for silicon-based electronics with added advantages of low cost and flexibility. However, few issues like high-operating voltage, low-switching speed, high-leakage current and reliability are still a challenge. The overall performance of an OTFT depends on organic semiconductors and gate dielectric interface. In this paper, we review the current status and trends in the choice of dielectric layer for OTFTs. As a starting point, the performance parameters of an OTFT and their dependence on the dielectric layer are briefly discussed. A variety of dielectric materials which includes high-k inorganic, organic, surface coated inorganics and nanocomposites are also presented. The advantages and drawbacks of each of these materials are discussed in detail. We reviewed the latest developments in the dielectric materials especially, self-assembled monolayers (SAMs), hybrid bilayers and nanocomposites. SAM-based OTFTs offer several advantages but shift in the threshold voltage remains a concern. Nanocomposites are a latest addition to the dielectric materials, which offer advantages like solution processing and improved dielectric constant but have a rough surface. A hybrid bilayer that incorporates the inorganic dielectric as a base layer and a thin polymer layer over it to improve the surface properties offers several desirable characteristics over the other choices. Hence, we propose that hybrid bilayer gate dielectrics shall play a pivotal role in improving the OTFT performance.

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High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors With Low-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula>/High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> Bilayer Gate Dielectric

Cited by 60 publications

References 12 publications

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

High Capacitance Dielectrics for Low Voltage Operated OFETs

Hybrid bilayer gate dielectric-based organic thin film transistors

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