High Performance Sub-0.1 μm Dynamic Threshold MOSFET Using Indium Channel Implantation

A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

“…Such a retrograde channel profile is the useful way to enhance with maintaining low . In fact, an enhanced drain current owing to large was realized in the Si DTMOS with super-steep-retrograde indium-channel profile [4]. After epitaxial growth and isolation processes, wet thermal oxidation of the Si cap layer at 750 C was carried out to form 8 nm-thick gate oxide.…”

High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts

“…Since the device exhibits the same normal-mode V TH under the off state (because V G = V BS = 0), low standby power consumption is maintained. The subthreshold slope and short channel effects are also improved due to the dynamics substrate bias [1][2][3]. However, the pn diode between the substrate and the source turns on as the forward bias between the substrate and the source terminals becomes larger than 0.7 V. A considerably large leakage current due to the turn-on diode current between substrate and source terminals was a serious issue under DT mode operation, as shown in Fig.…”