High-performance Te trilayer for optical recording

Bell, Alan; Bartolini, R. A.

doi:10.1063/1.90757

Cited by 43 publications

(7 citation statements)

References 2 publications

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“…The results of the ICE measurements of the momentum spread, beam profile, beam lifetime, etc. ... , were quite in agreement with theory and were published in a common paper [108], where also Carlo Rubbia (appointed to Director-General of CERN in 1989) and Simon van der Meer contributed. Further details of the cooling method in the ICE were published in Ref.…”

Section: A Mary Bellsupporting

confidence: 62%

Bell’s Universe: A Personal Recollection

Bertlmann

2016

Quantum [Un]Speakables II

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My collaboration and friendship with John Bell is recollected. I will explain his outstanding contributions in particle physics, in accelerator physics, and his joint work with Mary Bell. Mary's work in accelerator physics is also summarized. I recall our quantum debates, mention some personal reminiscences, and give my personal view on Bell's fundamental work on quantum theory, in particular, on the concept of contextuality and nonlocality of quantum physics. Finally, I describe the huge influence Bell had on my own work, in particular on entanglement and Bell inequalities in particle physics and their experimental verification, and on mathematical physics, where some geometric aspects of the quantum states are illustrated.

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Section: A Mary Bellsupporting

confidence: 62%

Bell’s Universe: A Personal Recollection

Bertlmann

2016

Quantum [Un]Speakables II

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“…Raman scattering in thin films is severely affected by optical interference and has been studied in very thin absorbing films as well as in transparent layers . Amplification of Raman bands occurs in interference layer being either a layer under study or a capping layer.…”

Section: Introductionmentioning

confidence: 99%

“…Raman scattering in thin films is severely affected by optical interference and has been studied in very thin absorbing films as well as in transparent layers. [1][2][3][4][5][6] Amplification of Raman bands occurs in interference layer being either a layer under study or a capping layer. The effect, often been referred to as interference-enhanced Raman scattering (IERS), is related to thickness of an interference film.…”

Section: Introductionmentioning

confidence: 99%

Interference‐enhanced Raman scattering in SiO₂/Si structures related to reflectance

Vančo¹,

Kotlár

Kadlečíková

et al. 2019

J Raman Spectroscopy

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Enhancement of Raman scattering due to optical interference may act as a source of error in the issues necessitating a determination of Raman intensity. Its dependence on thin film thickness is the conventional way how to examine the effects of optical interference in Raman signal. To provide a new platform for evaluation of signal coming from substrate in the presence of a transparent capping, we investigate its relation to reflectance (R) instead of the capping thickness. We derived a theoretical model, which was experimentally tested on simple structures consisting of SiO2 deposited on mono‐Si substrates. In agreement between the model and the experiment, interference enhancement is proportional to the product of (1 − R) terms taken at excitation and scattered light wavenumbers. We experimented with two different Raman bands in Si on two different Raman systems. The model was valid regardless of excitation, Raman band, and grating. Constructed for normal incidence, it was in agreement with experiment using objectives with numerical apertures up to 0.25 (0.32). The model was valid also in ultraviolet region, where imaginary part in refractive index of Si considerably rises.

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“…It may be concluded that the deoxidization process in the mixture has completely progressed according to the representation (1 ). From the compositional analysis by an Auger electron spectrometer for the Te sub-oxide system prepared by this method, it was found that atomic ratio of oxygen to tellurium, 0/Te, agreed with the calculated value using the renresentation (1) .…”

Section: Shown Inmentioning

confidence: 54%