High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Rao, Sandro; Pangallo, Giovanni; Pezzimenti, F.; Corte, Francesco G. Della

doi:10.1109/led.2015.2436213

Cited by 74 publications

(25 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work we analyze a large set of experimental data showing that the V F vs. T J relationship can be optimized to perform an excellent linearity, allowing to easily and reliably measure the internal device temperature, without involving an external temperature sensor. The technique is developed starting from previous studies carried out on diodes of various types and sizes [28]- [31], and is here shown to be perfectly suitable also for LEDs, and further improved to make the measurement faster and the measuring circuit simpler. It is worth noting that a highly linear dependence in a wide temperature range allows the simplest experimental pre-calibration procedure of the device, which can be in fact carried out at just two temperatures.…”

Section: Introductionmentioning

confidence: 99%

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

Self Cite

View full text Add to dashboard Cite

A detailed study about the direct measurement of junction temperature T J of off-the-shelf power light emitting diodes (LED) is presented. The linear dependence on temperature of the voltage drop across the device terminals at a constant current is in particular exploited and fully characterized, in the temperature range from T = 35 • C to 135 • C, with tests repeated at one thousand different probe currents. The accurate experimental data, obtained on several LED samples bearing two different part numbers, are reported, showing that they exhibit a high degree of linearity in wide current ranges, a circumstance that allows for a fast and reliable calibration as sensors. The measurement error is also fully characterized in terms of repeatability and stability over time, with measurements repeated after 600, 900, 1200 and 1800 hours of applied electro-thermal stress, demonstrating that the relevant sensor parameters stabilize after a few hundred hours of operation. A full set of parameters is provided for the two device models, allowing the direct use of each LED for the self-monitoring of the junction temperature and ensure compliance with their safe operating area over time. Moreover, a procedure and a simple circuit for the real time measurement of T J , while the LED is on, are presented. The procedure does not require a stable current source, and relies instead on the application of a sub-threshold current ramp for such a short time that the change in the output light is not perceived by human eyes. INDEX TERMS LED, light emitting diodes, junction temperature, temperature sensors, diode sensors.

show abstract

Section: Introductionmentioning

confidence: 99%

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…All of these reported simple devices show low sensitivities and relatively poor linearity. In a recent work, for the first time, a proportional to absolute temperature (PTAT) sensor was developed, based on two identical 4H-SiC Schottky diodes biased with different currents [10]. However, there have hitherto been no reports on sensitivity variations in SiC junction barrier Schottky (JBS) devices.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

et al. 2020

View full text Add to dashboard Cite

Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

show abstract

“…Temperature sensors are required in virtually all monitoring applications, irrespective of investigated settings [1]. As advancements in regulations targeting the minimization of industrial impact on the environment are carried out, precise temperature control and energy efficiency have become essential research topics, which exert ever-growing standards from temperature sensors [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19]. This aspect works in tandem with the fact that most industrial processes demand careful monitoring of temperature levels in order to ensure optimal quality and yield [1,6].…”

Section: Introductionmentioning

confidence: 99%

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

Draghici

Brezeanu

Pristavu

et al. 2019

Sensors

View full text Add to dashboard Cite

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R2 > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C.

show abstract

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Cited by 74 publications

References 12 publications

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

Contact Info

Product

Resources

About