High performance thin-film lithium niobate modulator on a silicon substrate using periodic capacitively loaded traveling-wave electrode

Chen, Gengxin; Chen, Kaixuan; Gan, Ranfeng; Ruan, Ziliang; Zong, Wang; Huang, Pucheng; Lu, Chao; Lau, Alan Pak Tao; Dai, Daoxin; Guo, Changjian; Liu, Liu

doi:10.1063/5.0077232

Cited by 73 publications

(32 citation statements)

References 25 publications

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“…4. Considering the length of the MZI structure, i.e., 2 mm, a V π L of 0.35 V•cm is obtained, which is also close to the simulation results (see Supplementary Note 2), and considerably less than those achieved in conventional MZI modulators based on TFLN [25][26][27][37][38][39] .…”

Section: Structure and Principlesupporting

confidence: 85%

“…Clearly, the key part of this design is the MZI coupling-ratio modulator. Here, a periodic capacitively-loaded traveling-wave (CLTW) electrode structure is adopted, which has been proved to give so far the best modulation performances on TFLN [37][38][39] . The whole device structure is designed and fabricated on a commercial x-cut LN-on-insulator (LNOI) wafer with a 400-nm thick TFLN layer and a 3-μm thick buried oxide layer on a Si substrate (see Methods).…”

Section: Structure and Principlementioning

confidence: 99%

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Breaking the bandwidth limit of a high-quality-factor ring modulator based on thin-film lithium niobate

Xue

Gan

Chen

et al. 2022

Preprint

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Growing global data traffic requires high-performance modulators with a compact size, a large bandwidth, a low optical loss, and a small power consumption. A careful trade-off among these parameters usually has to be made when designing such a device. Here, we propose and demonstrate an electro-optic ring modulator on the thin-film lithium niobate platform without compromising between any performances. The device exhibits a low on-chip loss of about -0.15dB with a high intrinsic Q-factor of 7.7×105. Since a pure coupling modulation is employed, the photon life-time is no longer a limiting factor for the modulation speed. A large electro-optic bandwidth is obtained without any roll-off up to 67 GHz. The device, with a footprint of 3.4 mm×0.7 mm, also exhibits a low half-wave voltage of 1.75 V, corresponding to a half-wave voltage length product of 0.35 V∙cm considering the 2-mm long modulation section. Driverless data transmission up to 240 Gb/s is also demonstrated.

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Section: Structure and Principlesupporting

confidence: 85%

Section: Structure and Principlementioning

confidence: 99%

Breaking the bandwidth limit of a high-quality-factor ring modulator based on thin-film lithium niobate

Xue

Gan

Chen

et al. 2022

Preprint

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“…In this paper, we demonstrate silicon–TFLN hybrid modulators with large bandwidths and low half-wave voltages using the CLTW electrode. The necessary index matching of the optical and RF waves is achieved through an undercut etching technique of the silicon substrate . Additionally, a hybrid waveguide without etching LN is employed to facilitate the fabrication of the optical waveguide in the modulation section .…”

Section: Introductionmentioning

confidence: 99%

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

et al. 2022

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High-performance silicon and thin-film lithium niobate hybrid electro-optic modulators are demonstrated. In order to break the voltage–bandwidth limit in a normal traveling-wave modulator, a periodic capacitively loaded traveling-wave electrode is employed in this hybrid platform. The silicon substrate is undercut-etched to achieve index matching of the optical wave and microwave. A hybrid waveguide with a lithium niobate thin film bonded on a silicon wire is employed. Lithium niobate etching is not required for making the hybrid optical waveguides. We realize an intensity modulator of 12.5 mm long modulation section, which exhibits a low half-wave voltage of 1.7 V and a large 3 dB modulation bandwidth of >70 GHz. Data transmissions with various modulation formats beyond 100 Gbit/s are successfully achieved with dynamic extinction ratios of >8 dB. Combining the advantages of the silicon and thin-film lithium niobate platforms, a compact dual polarization coherent modulator is also experimentally demonstrated, on which 96 Gbaud 16-level quadrature amplitude modulation signals in both polarizations are successfully transmitted.

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“…This provides tunability of n RF , and drastically reduces the RF loss compared to a UV15-clad electrode, increasing EO bandwidth. However, these require either the use of a quartz handle or a complicated substrate-removal technique after electrode fabrication to match n og and n RF [7], [8]. These methods then preclude fabrication of the device in any established silicon foundry.…”

Section: Introductionmentioning

confidence: 99%

Integrated Lithium Niobate Intensity Modulator on a Silicon Handle With Slow-Wave Electrodes

Nelan

Mercante

Shi

et al. 2022

IEEE Photon. Technol. Lett.

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Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require the use of a quartz handle or substrate removal, adding cost and additional processing. In this work, a high-speed dual-output electro-optic intensity modulator in the thin-film silicon nitride and lithium niobate material system that uses segmented electrodes for RF and optical index matching is presented. The device uses a silicon handle and does not require substrate removal. A silicon handle allows the use of larger wafer sizes to increase yield, and lends itself to processing in established silicon foundries that may not have the capability to process a quartz or fused silica wafer. The modulator has an interaction region of 10 mm, shows a DC half wave voltage of 3.75 V, an ultra-high extinction ratio of roughly 45 dB consistent with previous work, and a fiber-to-fiber insertion loss of 7.47 dB with a 95 GHz 3 dB bandwidth.

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High performance thin-film lithium niobate modulator on a silicon substrate using periodic capacitively loaded traveling-wave electrode

Abstract: High-performance and compact integrated photonics platform based on silicon rich nitride-lithium niobate on insulator APL Photonics 6, 116102 (2021);

Cited by 73 publications

References 25 publications

Breaking the bandwidth limit of a high-quality-factor ring modulator based on thin-film lithium niobate

Breaking the bandwidth limit of a high-quality-factor ring modulator based on thin-film lithium niobate

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

Integrated Lithium Niobate Intensity Modulator on a Silicon Handle With Slow-Wave Electrodes

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