High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Wang, Daoqin; Jiang, Zongjin; Li, Linhan; Zhu, Deliang; Wang, Chunfeng; Han, Shun; Fang, Ming; Liu, Xinke; Liu, Wenjun; Cao, Peijiang; Lu, Yunxiang

doi:10.3390/nano13081422

Cited by 5 publications

(3 citation statements)

References 33 publications

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“…Its wide band gap value, high exciton binding energy [1], high dielectric constant [1], tunable refractive index [2], and antibacterial activity [3] make it a crucial mineral oxide for study. Consequently, ZnO has attracted considerable interest in various applications such as gas-sensing [4], solar cells [5], UV detection [6], and transistors [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on properties of La-doped Zinc Blende/Wurtzite ZnO thin films prepared by spray pyrolysis

Aboud,

Al-Harbi,

Mostafa Khlifa

et al. 2024

Phys. Scr.

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Thin films of ZnO doped with 3wt% Lanthanum were deposited on glass substrates using spray pyrolysis for varying thicknesses. The impact of thickness on the physical properties of the films was investigated using various techniques. XRD results revealed the formation of a mixture of two phases, cubic Zinc Blende (ZB) and hexagonal Wurtzite (WU), with their ratios changing based on film thickness. Crystallite size measurements indicated that the cubic phase granules remained stable at 14.6 nm up to a thickness of 719 nm, decreasing to 14 nm at 846 nm, while the crystallite size of the hexagonal phase increased to 18 nm at 846 nm. FE-SEM images showed changes in surface morphology with increasing thickness, and EDX analysis demonstrated a consistent La/Zn ratio across all film thicknesses. The refractive index exhibited a shift from normal to abnormal dispersion when the thickness exceeded 719 nm, and the high-frequency dielectric constant decreased from 3.2 to 2.91 as thickness increased. Additionally, optical band gaps ranged from a minimum of 3.19 eV at 719 nm thickness to a maximum of 3.23 eV at 846 nm thickness. The study examined the effectiveness of the deposited films in blocking UV light with a wavelength of 365 nm. It was discovered that the decay time significantly decreased to 143s at a thickness of 661 nm, compared to longer times observed at other thicknesses.

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Section: Introductionmentioning

confidence: 99%

Effect of thickness on properties of La-doped Zinc Blende/Wurtzite ZnO thin films prepared by spray pyrolysis

Aboud,

Al-Harbi,

Mostafa Khlifa

et al. 2024

Phys. Scr.

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“…The fabrication of MOS TFTs can be achieved through either solution [1][2][3][4][5] or vacuum process [1,6]. Solution processes [1][2][3][4][5], including spray pyrolysis, spin coating, and inkjet printing, are commonly employed for MOS TFT fabrication [7][8][9][10][11][12][13][14][15][16][17][18][19]. Solution processes offer the advantage of operating at low temperatures, facilitating the deposition of metal-oxide-semiconductor (MOS) films on flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

Chang,

Bukke,

Bae

et al. 2023

Nanomaterials

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Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excellent stability under bias stress. TFTs have widespread applications, such as printed electronics, flexible displays, smart cards, image sensors, virtual reality (VR) and augmented reality (AR), and the Internet of Things (IoT) devices. In this study, we approach using a low-temperature solution-processed hafnium zirconium oxide (HfZrOx) gate insulator (GI) to improve the performance of lanthanum zinc oxide (LaZnO) TFTs. For the optimization of HfZrO GI, HfZrO films were annealed at 200, 250, and 300 °C. The optimized HfZrO-250 °C GI-based LaZnO TFT shows the μFE of 19.06 cm2V−1s−1, threshold voltage (VTH) of 1.98 V, hysteresis voltage (VH) of 0 V, subthreshold swing (SS) of 256 mV/dec, and ION/IOFF of ~108. The flexible LaZnO TFT with HfZrO-250 °C GI exhibits negligible ΔVTH of 0.25 V under positive-bias-temperature stress (PBTS). The flexible hysteresis-free LaZnO TFTs with HfZrO-250 °C can be widely used for flexible electronics. These enhancements were attributed to the smooth surface morphology and reduced defect density achieved with the HfZrO gate insulator. Therefore, the HfZrO/LaZnO approach holds great promise for next-generation MOS TFTs for flexible electronics.

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“…ZnO is a widely used semiconductor, owing to its large bandgap, high exciton energy at room temperature, tunable conductivity, high transparency in the visible spectrum range, and good piezoelectric property. It has enormous applications in UV photodetectors [ 9 , 10 , 11 ], transparent conductive oxide [ 12 , 13 ], light-emitting diodes [ 14 , 15 ], thin film transistors [ 16 , 17 ], piezoelectric devices [ 18 ], nano-lasers [ 19 ], gas sensors [ 20 ], and photovoltaic cells [ 21 ]. We exploited ZnO as the active layer of UV photodetectors for its good photoelectric performance in the UV spectrum range.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Surface Processing on the Surface Plasmonic Enhancement of an Al-Nanoparticles-Enhanced ZnO UV Photodectector

Yan

Zhao

et al. 2023

Nanomaterials

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Surface Plasmonic Resonance (SPR) induced by metallic nanoparticles can be exploited to enhance the response of photodetectors (PD) to a large degree. Since the interface between metallic nanoparticles and semiconductors plays an important role in SPR, the magnitude of the enhancement is highly dependent on the morphology and roughness of the surface where the nanoparticles are distributed. In this work, we used mechanical polishing to produce different surface roughnesses for the ZnO film. Then, we exploited sputtering to fabricate Al nanoparticles on the ZnO film. The size and spacing of the Al nanoparticles were adjusted by sputtering power and time. Finally, we made a comparison among the PD with surface processing only, the Al-nanoparticles-enhanced PD, and the Al-nanoparticles-enhanced PD with surface processing. The results showed that increasing the surface roughness could enhance the photo response due to the augmentation of light scattering. More interestingly, the SPR induced by the Al nanoparticles could be strengthened by increasing the roughness. The responsivity could be enlarged by three orders of magnitude after we introduced surface roughness to boost the SPR. This work revealed the mechanism behind how surface roughness influences SPR enhancement. This provides new means for improving the photo responses of SPR-enhanced photodetectors.

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High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Cited by 5 publications

References 33 publications

Effect of thickness on properties of La-doped Zinc Blende/Wurtzite ZnO thin films prepared by spray pyrolysis

Effect of thickness on properties of La-doped Zinc Blende/Wurtzite ZnO thin films prepared by spray pyrolysis

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

The Influence of Surface Processing on the Surface Plasmonic Enhancement of an Al-Nanoparticles-Enhanced ZnO UV Photodectector

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