High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation

Abstract

Three-terminal fin field-effect transistors (3T-FinFETs) were fabricated by neutral-beam oxidation (NBO) to form gate silicon dioxide (SiO2). The 3T-FinFET fabricated by NBO showed higher device performance – namely, a higher subthreshold slope and a higher effective mobility – than that fabricated by conventional thermal oxidation. It is considered that those improved subthreshold slope and mobility are due to the fact that the three-dimensional structure of a SiO2 film fabricated by NBO has a lower interfacial state density and a lower roughness than a similar structure fabricated by the conventional thermal oxidation of a SiO2 film. The reasons for the lower interfacial state density and lower roughness are the low temperature and lattice plane independence of NBO in comparison with conventional thermal oxidation processes.

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

“…The concept of this process, in which the kinetic energy of neutral oxygen (O) particles enables the formation of high-quality oxide films at low temperature, is expected to be applicable to the oxidation of various materials. In fact, surface oxidation using the O beam can be applied for the formation of silicon (Si) oxide, [12][13][14][15] germanium oxide, 16,17) gallium arsenide oxide 18) and aluminum oxide. 19) In addition, the formation of a tantalum oxide film and improvement of a ZnO film characteristic were reported to obtain high-quality metallic oxide films as an ionic transport layer, which was applied for the fabrication of RRAM devices, resulting in the typical bipolar resistive switching.…”

Ta2O5-based redox memory formed by neutral beam oxidation

“…The concept of the neutral beam process, in which the kinetic energy of neutral oxygen particles enables the formation of high-quality oxide films at low-temperature, is expected to be applicable to the oxidation of various materials. Actually, this oxidation process can be applied for the formation of silicon (Si) oxide, [21][22][23][24] germanium oxide, 25,26) gallium arsenide oxide 27) and aluminum oxide. 28) Recently, neutral beam oxidation using a tantalum (Ta) metal film was reported to obtain a Ta 2 O 5 film as an ionic transport layer, which was applied for the fabrication of a redox-based memory device, resulting in the typical bipolar resistive switching.…”

Formation of Ge oxide film by neutral beam postoxidation using Al metal film

“…The concept of this process, in which the kinetic energy of neutral oxygen particles enables the formation of high-quality oxide films at low temperatures, is expected to be applicable to the oxidation of various materials. In fact, this oxidation process can be used for the formation of Si oxide, [14][15][16][17] gallium arsenide oxide, 18) and tantalum metallic oxide. 19) We also achieved the formation of high-quality GeO x films 17) and the fabrication of Ge MOS structures with low interface state density.…”