2015
DOI: 10.1126/sciadv.1400251
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High-performance transistors for bioelectronics through tuning of channel thickness

Abstract: Transistors with tunable transconductance allow high-quality recordings of human brain rhythms.

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Cited by 588 publications
(900 citation statements)
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“…Therefore, the volumetric response of the capacitance leads to a dependence of the transconductance on the channel dimension. [19] For a fixed device geometry, the thickness of the active layer can then be used to tune the transconductance, and hence the performance, of the device. Thick films of BBL, ranging from 40 to 180 nm, were prepared via spray-coating depositions of an aqueous BBL dispersion (details of the preparation steps can be found in the Experimental Section).…”
mentioning
confidence: 99%
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“…Therefore, the volumetric response of the capacitance leads to a dependence of the transconductance on the channel dimension. [19] For a fixed device geometry, the thickness of the active layer can then be used to tune the transconductance, and hence the performance, of the device. Thick films of BBL, ranging from 40 to 180 nm, were prepared via spray-coating depositions of an aqueous BBL dispersion (details of the preparation steps can be found in the Experimental Section).…”
mentioning
confidence: 99%
“…A linear correlation is found between transconductance and active layer thickness (see Figure S4 of the Supporting Information), in agreement with previous reports. [19] The volumetric capacitance, as extracted from impedance measurements at different film thickness and V G = 0.5 V, is ≈930 ± 40 F cm −3 ( Figure S5, Supporting Information). Remarkably, this value exceeds more than twofold that of other NDI-based OECTs (≈400 F cm −3 ), [10] and is several orders of magnitude higher than that estimated for n-type electrolyte-gated field-effect transistors.…”
mentioning
confidence: 99%
“…It was recently shown that the capacitance of OECTs is volumetric in nature. 34,35 The implications are that g m is dependent on the thickness of the semiconductor and that the value of the effective capacitance per unit area C i used in equation 1 is a projected value of the capacitance per unit volume C * of the three-dimensional electrode defined by the bulk of the semiconductor channel, and not the interfacial double layer capacitance C DL = 20 µF cm −2 of the PIL/IL ion gel, that we obtained using a Au/ion gel/PEDOT:PSS stack via impedance spectroscopy. Here, we obtained averages of C i = 197±17 µF cm −2 and C * = 98±9 µF cm −3 .…”
mentioning
confidence: 99%
“…Rivnay et al 5 recently measured electrochemical impedance spectra of PEDOT:PSS cast from dispersion to form films of different volumes. An equivalent circuit consisting of a capacitor and two resistors gave a good fit to the entire data set.…”
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confidence: 99%