High-performance uncooled 1.3-µm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for fiber-in-the-loop applications

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

“…With the aim of improving the performances of InP-based semiconductor lasers, several studies have been done on InGaAlAs multiple-quantumwell (MQW) structures as an alternative to InGaAsP MQW structures [1][2][3]. The superior properties of InGaAlAs MQW lasers are due to the large conduction-band offset and the small valence-band offset in the MQW structures.…”

In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

“…With the aim of increasing the characteristic temperature and modulation speed of InPbased semiconductor lasers, several studies have been done on InGaAlAs multiple-quantum-well (MQW) structures as an alternative to InGaAsP MQW structures [1,2]. However, in the case of using aluminum-containing materials for buriedheterostructure (BH) lasers and integrated optical devices, the crystalline quality of the regrowth interface is poor because of strong oxidization of the aluminum-containing surface.…”

Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP–InP quantum-well lasers

“…(6) and (7) into Eq. (1), the characteristic temperature of threshold current T 0 ðI th Þ is derived as…”

“…The improved T 0 ðg d Þ in 1.3-lm InGaAsP-InP MQW laser with a larger well number directly creates the improvement of T 0 ðI th Þ, the variation of internal loss with temperature and the temperature dependence of G 0 play negligible roles in determining the temperature sensitivity of threshold current in InGaAsP-InP material system. However, in InGaAlAs-InP material system, these two effects must be included to account for T 0 ðI th Þ due to the strong electron confinement and very high T 0 ðg d Þ [6]. From the viewpoint of practical application, a less temperature dependent output power at a fixed drive current is more important than the reduced temperature sensitivity of threshold current if 1.3-lm InGaAsP-InP MQW lasers are required to work over a wide temperature range without cooling [13].…”