High-performance UV detectors based on room-temperature deposited amorphous Ga<sub>2</sub>O<sub>3</sub> thin films by RF magnetron sputtering

Han, Shun; Huang, Xiaoling; Fang, Mingzhi; Zhao, Weiguo; Xu, Shengqiang; Zhu, Deliang; Xu, Wangying; Fang, Ming; Liu, Wenjun; Cao, Peijiang; Lu, Yunxiang

doi:10.1039/c9tc03613j

Cited by 46 publications

(28 citation statements)

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“…In addition, the binding energies of Ga2p 3/2 , Ga2p 1/2 and Ga3d of the pristine GR a-GaO X films are minimal in all GaO X films (Figure 2b), indicating the existence of abundant Ga-Ga units. [32][33][34] The nonmonotonic variation of the O II /(O II +O I ) ratio and the shift of Ga2p and Ga3d spectra indicate that informative evolution processes happen at various annealing temperatures. Owing to the customized GaO X growth method with rich Ga component, the GR a-GaO X films intrinsically possess a high V O concentration with a high O II /(O II +O I ) ratio of 42.5% (Figure 2a).…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

et al. 2021

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photodetector (SBPD), as an indispensable part of spectral detectors, plays important roles distinctively in various crucial applications, such as missile tracking, flame prewarning, secure communication, and environment monitoring. [1][2][3][4] In terms of the possible harsh application environment, high-performance SBPDs with excellent tolerance towards high temperature, high voltage, and high radiation, are required inevitably. Based on low cost and mature technology, the currently available Si-based SBPDs are facing the challenges of filter dependence, low penetration depth of high-energy ultraviolet (UV) photons, and finite responsivity (R) towards solar-blind region. [5][6][7] Especially, Si-based SBPDs suffer serious thermal instability owing to the narrow bandgap, which suppresses their high-temperature applications. Advanced SBPDs based on wide bandgap (WBG) materials, such as MgZnO, [8] AlGaN, [9,10] diamond, [11] and Ga 2 O 3 , [12] are believed as subversive substitutes of Si-based SBPDs. Among the various WBG materials, Ga 2 O 3 is the most desirable candidate for SBPDs applications based on the facts that, i) its ultra-wide bandgap (4.5-4.9 eV) corresponds to the solar-blind region directly without the necessity of bandgap modulation by doping or alloying process; [13] ii) its high absorption coefficient for high-energy UV photons benefits outstanding sensitivity in solar-blind region; [14] iii) it balances high solar-bind response and material workability; [15] iv) its large-size bulk single crystals can be put into mass production by low-cost melt-grown methods; [16] and most importantly, v) it has high structural stability toward temperature, radiation, and electric field for harsh-environment application. [17] High-quality Ga 2 O 3 material, including single-crystal substrates, nanostructures, and epitaxial films, [14,18,19] facilitate sharp junction interface, such as P-N heterojunction, [20] N-N heterojunction, [21] phase junction, [22] and Schottky junction, [23] to improve the solar-blind response performance. Nevertheless, so far, high-performance SBPDs based on high-quality Ga 2 O 3 Gallium oxide (Ga 2 O 3 ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga 2 O 3 material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaO X (a-GaO X ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaO X film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaO...

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Section: Resultsmentioning

confidence: 99%

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

et al. 2021

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“…The data for this figure has been compiled from refs. [16,[41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77].…”

Section: Basics Of Photodetectormentioning

confidence: 99%

“…[49] A much faster response of τ r = 0.17 µs is reported by Han et al in amorphous GaO x thin film based MSM photodetector. [51] In addition to the standalone phases serving as the functional material, there has been growing research on making phase junctions with the different polymorphs of gallium oxide. Being essentially the same material leads to a much smaller lattice mismatch and the slight differences in their bandgap gives the advantage of a built-in electric field which helps in the segregation of the photogenerated carriers.…”

Section: The Functional Material-gallium Oxide: Properties For Photodetection Applicationsmentioning

confidence: 99%

“…The use of a high resistivity cap layer that acts as a photoconductor has also been employed to show photosensitivity in both forward and reverse bias [96,145] (Figure 11e). Han et al [51] have attributed the increase in responsivity in their amorphous Ga 2 O 3 based device to the quasi-Zener tunneling amplification process of charge carriers between regions of different resistances within the amorphous layer. Tunneling, under illumination is also responsible for the high gain in the MSM PD fabricated by Xu et al [168]…”

Section: Responsivitymentioning

confidence: 99%

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A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

305

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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“…Han et al conducted the modulation of Ar pressure during a‐Ga 2 O 3 film fabrication by RF‐magnetron sputtering and developed a high‐performance UV PD. [ 111 ] The device with maximum responsivity of 436.3 A/W (under 240 nm UV light) was obtained on the film deposited at 0.5 Pa, which is mainly due to the quasi‐Zener tunneling multiplication mechanism between different resistance areas in a‐Ga 2 O 3 thin films.…”

Section: Uv Pds Using A‐gaox Thin Filmsmentioning

confidence: 99%

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Liang

Han

2020

Physica Status Solidi (a)

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Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaOx), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaOx using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaOx and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaOx materials and photodetectors.

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High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering

Abstract: Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Cited by 46 publications

References 47 publications

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Abstract: Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Cited by 46 publications

References 47 publications

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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High-performance UV detectors based on room-temperature deposited amorphous Ga₂O₃ thin films by RF magnetron sputtering

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering