High performance UV photodetector based on 2D non-layered CuGaS<sub>2</sub> nanosheets

Xin, Bei; Wu, Yutong; Liu, Xiaorui; Zhang, Nan; Yu, Haiming; Feng, Wei

doi:10.1088/1361-6641/ab0bdf

Cited by 15 publications

(10 citation statements)

References 20 publications

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“…Lan et al [43] also achieved a centimeter-scale monolayer growth on sapphire, seeding the precursor on the substrate was essential to achieve this. Chen et al [44] treated Si/SiO 2 substrates with 3-aminopropyltriethoxysilane (silanization) before coating them with a tungsten oxide containing solution. The silanization treatment enabled a uniform dispersion of tungsten precursor [44].…”

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

“…Chen et al [44] treated Si/SiO 2 substrates with 3-aminopropyltriethoxysilane (silanization) before coating them with a tungsten oxide containing solution. The silanization treatment enabled a uniform dispersion of tungsten precursor [44]. As with MOCVD, uniformity allows for a homogenous growth, enabling film synthesis.…”

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

“…As with MOCVD, uniformity allows for a homogenous growth, enabling film synthesis. This work resulted in 1 cm-scale growth of monolayer WS 2 films, with grains on the order of 100 microns [44]. However, the silanization process essentially adds a 'contaminant' layer which would interfere with in situ device fabrication [44].…”

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

“…This work resulted in 1 cm-scale growth of monolayer WS 2 films, with grains on the order of 100 microns [44]. However, the silanization process essentially adds a 'contaminant' layer which would interfere with in situ device fabrication [44]. Hu et al [45] attempted growth directly on a Si/SiO 2 substrate, achieving flakes 160 µm-wide with morphologies controlled by the ratio of S and W source fluxes.…”

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

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Large area few-layer TMD film growths and their applications

2020

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Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono-and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

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Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

Section: Atmospheric Pressure Chemical Vapor Deposition (Apcvd)mentioning

confidence: 99%

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Large area few-layer TMD film growths and their applications

2020

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“…[1] In particular, thin layers of 2D materials have gained significant attention in the field of optoelectronics as they offer unique advantages such as strong quantum confinement effects reported relatively high bias values needed for photon detection (1-20 V) (see Table 1). [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] This is due to the higher recombination rates of photogenerated carriers displayed by MSM photodetectors. [29] To compensate the high operation bias, alternative routes are sought such as adding a dopant to the pristine ZnO, devising a heterostructure or making alterations to the MSM configuration, thereby adding further complications to the synthesis procedure and the fabricated structure.…”

Section: Introductionmentioning

confidence: 99%

A Visible‐Blind Photodetector and Artificial Optoelectronic Synapse Using Liquid‐Metal Exfoliated ZnO Nanosheets

Krishnamurthi

Ahmed

Mohiuddin

et al. 2021

Advanced Optical Materials

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that offers novel electrical, electronic, and optical properties that are distinct from their bulk counterparts along with mechanical flexibility and high compatibility with state-of-the-art silicon-based platform. [2][3][4] Among prominently studied materials in the last few decades is zinc oxide (ZnO), a highly versatile tunable material. [5] The optoelectronic properties of ZnO in various morphologies have been investigated widely. [6] Due to its strong absorption in the UV region, ZnO is an attractive candidate for visible-blind photodetectors. [7] With a wide bandgap of 3.39 eV, exciton binding energy as large as 60 meV at room temperature, and the ability to undergo a strong quantum confinement effect, atomically thin ZnO promises an excellent platform for optoelectronic applications. [8] Most importantly, oxygen adsorbed onto the surface of ZnO provides low electron densities that can enable low dark current which is ideal for low energy applications. [9] Though thin nanosheets (<20 nm) ZnO has been used as an active layer for various applications, the lack of a reliable and controllable synthesis technique to obtain large area few atoms thin ZnO has prevented the miniaturization of ZnO based optoelectronic devices slowly making the material less competitive compared to other emerging systems relying on atomically thin functional layers. [10][11][12] Also, ZnO and other planar metal-semiconductormetal (MSM) based UV photodetectors developed to date have Atomically thin 2D materials are highly sought for high-performance electronic and optoelectronic devices. Despite being a widely recognized functional material for a plethora of applications, ultra-thin nanosheets of zinc oxide (ZnO) at a millimeter-scale for developing high-performance electronic/optoelectronic devices have not been reported. This has prevented the exploration of electronic and optical properties of ZnO when it is only a few atoms thick. Here, a liquid metal exfoliation technique is used that takes advantage of the van der Waals forces between the interfacial oxide and the chosen substrate to obtain ZnO nanosheets with lateral dimensions in the millimeter scale and thickness down to 5 nm. Their suitability for applications is shown by demonstrating a visible-blind photodetector with high figures of merit as compared to other ZnO morphologies. At extremely low operating bias of 50 mV and low optical intensity of 0.5 mW cm −2 , the ZnO photodetector demonstrates an external quantum efficiency (EQE), responsivity (R), and detectivity (D*) of 4.3 × 10 3 %, 12.64 A W −1 , and 5.81 × 10 15 Jones at a wavelength of 365 nm. The trap-mediated photoresponse in the ZnO nanosheets is further utilized to demonstrate optoelectronic synapses. Versatile synaptic functions of the nervous systems are optically emulated with the ultra-thin ZnO nanosheets.

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Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

et al. 2019

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2D planar structures of nonlayered wide‐bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self‐confined chemical vapor deposition method is described. The enhanced spin‐triplet exciton (Zf, 2.98 eV) luminescence and polarization‐enhanced second‐harmonic generation based on the 2D CuBr flakes demonstrate the potential of short‐wavelength luminescent applications. Solar‐blind and self‐driven ultraviolet (UV) photodetectors based on the as‐synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W−1, an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short‐wavelength light‐emitting devices, nonlinear optical devices, and UV photodetectors.

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High performance UV photodetector based on 2D non-layered CuGaS₂ nanosheets

Cited by 15 publications

References 20 publications

Large area few-layer TMD film growths and their applications

Large area few-layer TMD film growths and their applications

A Visible‐Blind Photodetector and Artificial Optoelectronic Synapse Using Liquid‐Metal Exfoliated ZnO Nanosheets

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

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High performance UV photodetector based on 2D non-layered CuGaS2 nanosheets

Cited by 15 publications

References 20 publications

Large area few-layer TMD film growths and their applications

Large area few-layer TMD film growths and their applications

A Visible‐Blind Photodetector and Artificial Optoelectronic Synapse Using Liquid‐Metal Exfoliated ZnO Nanosheets

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

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High performance UV photodetector based on 2D non-layered CuGaS₂ nanosheets