High-performance UV photodetectors and temperature-dependent photoluminescence of individual ZnO hexagonal-prism microwire

Ding, Meng; Zhao, Dongxu; Ye, Bin; Qiao, Qian; Xu, Xijin

doi:10.1007/s00339-014-8828-y

Cited by 9 publications

(5 citation statements)

References 35 publications

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“…430 nm. The UV-to-visible rejection ratio (Δ I 370/Δ I 450 nm, where Δ I (= I light − I dark ) is the photocurrent) 12 , 13 of the photodetector is over two orders of magnitude (>5 × 10 2 ), as shown in the response spectrum, which indicates that the photodetector exhibits a high signal-to-noise ratio. In fact, a negative value of Δ I was detected, as discussed below.…”

Section: Resultsmentioning

confidence: 99%

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2D/0D graphene hybrids for visible-blind flexible UV photodetectors

Tetsuka

2017

Sci Rep

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Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe2-GQDs) with a large bandgap of ca. 3.3 eV. The NMe2-GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 104 A W–1 and ca. 5.5 × 1011 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.

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Section: Resultsmentioning

confidence: 99%

“…0.5 A W −1 . Their performance is inferior to those of pristine wide-bandgap semiconductor-based visible-blind UV photodetectors 12 , 13 .…”

Section: Introductionmentioning

confidence: 94%

2D/0D graphene hybrids for visible-blind flexible UV photodetectors

Tetsuka

2017

Sci Rep

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“…38 On the other hand, at shorter wavelengths, the absorption coefficient increased and the penetration depth of light became shallower, which eventually reduced the collection efficiency of the photogenerated carriers. 39 Those reasons were attributed to the relatively weaker photoresponse of 350 nm light. Figure 2(d 40 The ZnS thin film exhibited an absorption edge at 457 nm (inset of Figure 2(d)), but the studied device showed a high responsivity under the wavelength between 350 and 700 nm, which indicated the effective utilization of the EBIPC mechanism in wide-wavelength detection.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…On one hand, the increase of the photon energy under a constant power was inevitably at the cost of photon number . On the other hand, at shorter wavelengths, the absorption coefficient increased and the penetration depth of light became shallower, which eventually reduced the collection efficiency of the photogenerated carriers . Those reasons were attributed to the relatively weaker photoresponse of 350 nm light.…”

Section: Resultsmentioning

confidence: 99%

Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters

et al. 2018

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Flat panel photodetectors are widely studied and implemented in large-area imaging. However, developing highly sensitive flat panel photodetectors with high internal gain is still very challenging due to material limitation where photoelectron multiplication mechanisms have to be established. In this study, we proposed to use an electron bombardment induced photoconductivity (EBIPC) mechanism to achieve high internal gain in a flat panel photodetector based on a ZnS photoconductor integrated with ZnO nanowire (NW) field emitters. The photoconductivity of the ZnS thin film increased significantly upon bombardment with electrons from the emitters, which led to an internal photoconductive gain of above 104 in a wide wavelength range. The photoresponse behaviors under different device parameters further verified that the high gain depended on the enhanced light-responsive performance of the ZnS thin film induced by the EBIPC mechanism. The proposed EBIPC mechanism is promising for use in flat panel photodetectors achieving high gain.

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“…These results indicate an excellent performance of photodetectors based on our AVD grown C60 single crystals, which give more satisfactory values when compared with other reported photodetectors working under the similar conditions (Table 4). 37,[51][52][53][54][55][56][57][58][59][60] Furthermore, both AVD and DC photodetectors present good stability. As shown in Figure S18, both devices retained over 80% of their initial responsitivities after 240 h in 30% relative humidity at room temperature.…”

Section: = ℎ − (3)mentioning

confidence: 99%

Antisolvent-assisted controllable growth of fullerene single crystal microwires for organic field effect transistors and photodetectors

et al. 2018

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There are only a few reported methods by which the size and morphology of organic single crystals for high-performance organic field-effect transistors (OFETs) or other devices can be controlled. Here, a facile solution-processed antisolvent vapor diffusion method was employed to grow millimeter-length C60 single crystal microwires directly in solution. The size of the microwires can be controllably varied via the C60 concentration and/or the choice of antisolvent. OFETs fabricated from the as-produced microwires exhibit mobilities as high as 2.30 cm2 V-1 s-1. A clear relationship between the crystal preparation conditions and device performance is revealed whereby it is observed that the lower the evaporation rate of antisolvent and/or the higher the C60 concentration, the higher the device performance. Photodetectors based on our microwires give a responsivity that is an order of magnitude higher than those grown by drop-casting methods. This study provides a facile method for the crystal engineering of size-tunable millimeter-length C60 single crystals, and revealed the important influences of the antisolvent on the C60 crystal size and the performance of devices based on them. We believe that our processing approach can be further exploited for a broad range of other organic semiconductors to achieve desirable single crystal size and morphology and thus obtain desirable OFETs and photodetector performance.

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High-performance UV photodetectors and temperature-dependent photoluminescence of individual ZnO hexagonal-prism microwire

Cited by 9 publications

References 35 publications

2D/0D graphene hybrids for visible-blind flexible UV photodetectors

2D/0D graphene hybrids for visible-blind flexible UV photodetectors

Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters

Antisolvent-assisted controllable growth of fullerene single crystal microwires for organic field effect transistors and photodetectors

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