High-Performance UV–Vis Broad-Spectra Photodetector Based on a β-Ga₂O₃/Au/MAPbBr₃ Sandwich Structure

Abstract

The UV−vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV−vis PDs. This severely affects the practical application of UV−vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga 2 O 3 , Au electrodes, and the MAPbBr 3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga 2 O 3 /Au/MAPbBr 3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W −1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal−semiconductor− metal (MSM) structure MAPbBr 3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga 2 O 3 and MAPbBr 3 , which gives the β-Ga 2 O 3 /Au/MAPbBr 3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV−visible region.

In Situ Surface Modification Enables High Stability and Optoelectrical Performance for a Self‐powered Photodetector

“…The absorption spectrum of the MAPbBr 3 SC was shown in Figure 2e, a typical absorption edge was observed at ≈570 nm, which was in agreement with the previous study. [ 36 ] The optical bandgap of MAPbBr 3 SC can be determined by the Tauc relation: $$$$\begin{equation}\alpha hv\ = \ A{\left( {hv - {E}_g} \right)}^m\ \end{equation}$$$$where, E g is the optical band gap of the material, A is the transition probability parameter measuring the disorder of the material, hv is the incident photon energy, and m is the material constant, which provides information about the direct and indirect band properties of the material (direct bandgap, m = 0.5; indirect bandgap, m = 2). In the present work, the E g is estimated using the exponential part of the equation fitting spectra of the direct transition (m = 0.5).…”

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

“…[26] To achieve infrared photodetection for MAPbBr 3 perovskite-based PDs, common methods are to incorporate perovskite with narrow-bandgap semiconductors or upconversion nanoparticles to achieve complementary absorption. [27][28][29][30] These infrared PDs could only sense the NIR region, and present relatively low NIR performance due to the weak NIR absorption and/or inefficient photogenerated carrier extraction induced by the poor energy-level alignment at the interface of perovskite/narrow-bandgap materials. [31] Meanwhile, the incorporated materials might hinder the crystallization of perovskites, and potentially increase the material costs and device complexity.…”

Self-Powered Ultraviolet–Visible Transparent Photodetector Based on Mo-Doped BiVO4 Thin Films

“…Ultraviolet–visible (UV–vis) photodetectors (PDs) are the backbone of modern optoelectronic devices, which convert light energy into an electrical signal. UV–vis PDs are essential for wide-spectrum detection and optical communication, biomedical imaging, military defense systems, and flame detection. − Conventionally, PDs depend on an external power supply, which limits their application in reality. − In this context, self-powered UV–vis broadband PDs are drawing huge attention in the research field due to their wide range of self-powered detection, lower energy consumption, and easy integrability into optoelectronic devices. − However, most of the developed self-powered PDs are opaque in the visible light, which deters their wide application in daily life. To overcome this problem, the fabrication of self-powered transparent PDs (TPDs) is necessary, which are also essential for see-through optoelectronic devices. − …”