High-efficiency electromagnetic (EM) functional materials are the core building block of high-performance EM absorbers and devices, and they are indispensable in various fields ranging from industrial manufacture to daily life, or even from national defense security to space exploration. Searching for high-efficiency EM functional materials and realizing high-performance EM devices remain great challenges. Herein, a simple solution-process is developed to rapidly grow gram-scale organic-inorganic (MAPbX 3 , X = Cl, Br, I) perovskite microcrystals. They exhibit excellent EM response in multi bands covering microwaves, visible light, and X-rays. Among them, outstanding microwave absorption performance with multiple absorption bands can be achieved, and their intrinsic EM properties can be tuned by adjusting polar group. An ultra-wideband bandpass filter with high suppression level of −71.8 dB in the stopband in the GHz band, self-powered photodetectors with tunable broadband or narrowband photoresponse in the visible-light band, and a self-powered X-ray detector with high sensitivity of 3560 μC Gy air −1 cm −2 in the X-ray band are designed and realized by precisely regulating the physical features of perovskite and designing a novel planar device structure. These findings open a door toward developing high-efficiency EM functional materials for realizing high-performance EM absorbers and devices.

Semiconductor heterostructures underpin the design and performance of virtually all modern optoelectronic systems. The clear interface, high crystalline quality, and suitable energy band match lay the foundation for high‐performance heterojunction optoelectronic devices. Here, a facile solution epitaxial growth method is demonstrated for controllably growing CH3NH3PbBr3 single crystal (SC) on the CH3NH3PbCl3 SC, which forms a pn heterojunction with a well‐defined interface and high single‐crystalline quality. The thickness of the epitaxial layer can be finely controlled by adjusting the growth time. Benefiting from excellent built‐in electrical potential at pn heterojunction, the heterojunction detector shows an obvious rectification behavior and high performance in photo‐imaging and X‐ray detection without any power supply, including high responsivity (26.8 mA W−1), fast response time (8/613 µs), and high sensitivity of 868 µC Gyair−1 cm−2 with a record lowest detectable X‐ray dose rate of 15.5 nGyair s−1. Furthermore, it exhibits high‐fidelity UV photo‐imaging capability at zero bias voltage. In addition, the heterojunction detector shows excellent stability by maintaining 99% of the initial responsivity after 120 days without any encapsulation in the atmosphere. This work enables a significant advance in engineering perovskite SC heterojunction for developing novel and functional devices.

Perovskite photodetectors (PDs) have received extensive attention from researchers due to their potential applications in imaging and visual sensing. Among them, the metal-semiconductor-metal (MSM) PDs with simple preparation process and...

It has always been people’s dream to build optoelectronic devices with different functions like building blocks without the constraints of lattice matching and processing compatibility. Here, a series of self-powered...

The UV−vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV−vis PDs. This severely affects the practical application of UV−vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga 2 O 3 , Au electrodes, and the MAPbBr 3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga 2 O 3 /Au/MAPbBr 3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W −1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal−semiconductor− metal (MSM) structure MAPbBr 3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga 2 O 3 and MAPbBr 3 , which gives the β-Ga 2 O 3 /Au/MAPbBr 3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV−visible region.