High-performance visible-blind GaN-based p-i-n photodetectors

Abstract

We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was ∼0.23 AW at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7× 103 for wavelengths longer than 400 nm. © 2008 American Institute of Physics

Realization of a High‐Performance GaN UV Detector by Nanoplasmonic Enhancement

“…A lot of encouraging advances on GaN-based detectors have been reported in terms of their low dark current, high responsivity and high sensitivity in a variety of detector structures such as Schottky type, [4] metal-semiconductor-metal (MSM) type [4] and p-i-n type detectors. [5] In spite of these advantages, the performance of GaN-based UV detectors is still lower than expected and need much lower dark current and much higher responsivity in order to replace widely-used photomultiplier tubes to detect very weak UV signals. Currently, there are two main approaches to improve responsivity, namely photoconductive gain and avalanche multiplication.…”

Chemical bath deposited ZnO thin film based UV photoconductive detector

“…Wide band gap material such GaN, ZnO, TiO 2 , GaP etc. is used to detect the UV radiation due to their special properties such as the band gap energy value of these materials lies in the UV region, with their thermal stability and radiation hardness [3][4][5][6][7]. Among all these materials ZnO based UV photodetector studied extensively because of their outstanding physical and chemical properties [8].…”

An ultraviolet photodetector with an active layer composed of solution processed polyfluorene:Zn0.71Cd0.29S hybrid nanomaterials

“…The photoresponsivity values reported in this study are either comparable or higher than that of GaN (230 mA/W at 356 nm) [35] and SiC (130 mA/W at 270 nm) based UV-PDs [36] and has potential applications in environmental and biological monitoring. Contrary to the approaches followed in literature which explain mechanism in polymer:QD blends, i.e.…”