2012
DOI: 10.1002/adma.201102585
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Realization of a High‐Performance GaN UV Detector by Nanoplasmonic Enhancement

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Cited by 252 publications
(157 citation statements)
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References 29 publications
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“…Ahmadivand et al [47] have proposed to use aluminum nanoantennas to enhance the response of a GaN UV detector and, in this way, overcome some of the problems of current UV photodectors [48]. This nanoantenna consists on Al/Al 2 O 3 heptamers with the symmetry of a benzene molecule as Fano-resonant plasmonic nanoclusters.…”
Section: Aluminummentioning
confidence: 99%
“…Ahmadivand et al [47] have proposed to use aluminum nanoantennas to enhance the response of a GaN UV detector and, in this way, overcome some of the problems of current UV photodectors [48]. This nanoantenna consists on Al/Al 2 O 3 heptamers with the symmetry of a benzene molecule as Fano-resonant plasmonic nanoclusters.…”
Section: Aluminummentioning
confidence: 99%
“…[8][9][10][11] Among these, GaN is of great importance in optoelectronic and short-wavelength devices because of its widebandgap. [12][13][14] GaN has two crystal structures: wurtzite (hexagonal) and zinc-blende (cubic). Hexagonal GaN, as the stable phase of GaN and the mostly employed phase for light emitting diodes, has attracted most of the research efforts.…”
mentioning
confidence: 99%
“…As a result, more photo-generated electron-hole pairs were generated, leading to enhanced photocurrent. (2) Accelerated separation of electron-hole pairs owning to the enhanced electromagnetic field surrounding the plasmonic HGNs [42], [43], [44]. (3) Direct electron transfer (DET).…”
Section: Resultsmentioning
confidence: 99%