Plasmonic hollow gold nanoparticles induced high-performance Bi2S3 nanoribbon photodetector

Liang, Feng‐Xia; Ge, Cai-Wang; Zhang, Tengfei; Xie, Wei; Zhang, Deng-Yue; Zou, Yi-Feng; Zheng, Kun; Luo, Lin‐Bao

doi:10.1515/nanoph-2016-0024

Cited by 37 publications

(18 citation statements)

References 46 publications

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“…Plasmonic hot-electrons are highly energetic electrons that are generated in metal in the decay of surface plasmons [1]. The combination of an appropriate plasmonic metal and semiconductor to form a metal/semiconductor Schottky junction can transform light energy to other forms of energy via the plasmonic hot-electrons, and they have a wide application in photocatalysis [2], photoelectrochemical water splitting [3], photovoltaic conversion [4], photodetection [5][6][7] and so on. The plasmonic hotelectron photodetector composed of a metal/semiconductor Schottky junction is a new kind of photodetector [8][9][10][11] which has the advantages of enabling a response to the photons with energy below the bandgap of the semiconductor substrate and having a tunable spectral response peak by simply adjusting the metal nanostructure [7,12], therefore attracting a great deal of attention.…”

Section: Introductionmentioning

confidence: 99%

Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

et al. 2019

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Due to the advantages of narrow energy distribution of plasmonic hot-electrons in Ag and the high density of states in the TiO2 conduction band, an Ag/TiO2 composite is considered to be an ideal combination to construct a plasmonic hot-electron photodetector with high detectivity and a high response speed. In this work, we fabricate a porous Ag/TiO2-Schottky-diode based plasmonic hot-electron photodetector. This detector shows a high detectivity of 9.8 × 1010 cmHz1/2/W and a fast response speed, with a rise and fall time of 112 μs and 24 μs, respectively, under 450 nm light illumination at zero bias voltage. In addition, the height of the Ag/TiO2 Schottky barrier can be decreased by removing the chemisorbed oxygen from the surface of TiO2 with ultraviolet light illumination, and as a result, the responsivity of the Ag/TiO2 plasmonic hot-electron photodetector at 450 nm can increase from 3.4 mA/W to 7.4 mA/W.

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Section: Introductionmentioning

confidence: 99%

Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

et al. 2019

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“…Not only the MNP diameters, but also the core–shell structures of the MNPs can be accurately controlled, Colloidal Au NPs are usually synthesized by reduction of HAuCl 4 solution in alcohol, while colloidal Ag NPs can be obtained by citrate reduction of AgNO 3 aqueous solution. By further adsorbing the colloidal MNPs on single 1D semiconductor materials in solution phase, Luo and co‐workers achieved a 1D plasmonic photodetector with band‐edge absorption wavelengths from the UV to near‐infrared regions, including Cl‐doped ZnS (λ bandgap = 365 nm), ZnSe (λ bandgap = 480 nm), ZnTe (λ bandgap = 539 nm), CdSe (λ bandgap = 729 nm), Si nanorods (λ bandgap = 850 nm), and Bi 2 S 3 (λ bandgap = 953 nm) . Details of their enhanced performance are given in Table 1 .…”

Section: Ld Plasmonic Photodetectors Based On Metal Npsmentioning

confidence: 99%

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Huang

Luo

2018

Advanced Optical Materials

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to these characteristics, LD photodetectors based on atomically thin 2D materials (e.g., graphene, MoS 2 , WS 2 , etc.), [3][4][5][6][7] 1D semiconductor nanowires (e.g., ZnO, Si, GaN, SnO 2 , etc.), [8] and 0D QDs (such as the PbS QD layer, the HgTe QD layer, and the InAs QDs in quantum wells) [9][10][11][12] are at the forefront of photodetector research for their competitive device performance in terms of higher responsivity, high photoconductive gain, and fast response speed. While the downscaling of devices hastens the electrical signal due to the short length of the electron transport, the small volume of the LD photodetectors also suffers from low absorption of light, e.g., 2.3% for single-layer graphene. [13] Surface plasmon polariton (SPP) is light-excited collective oscillation of free electrons on an interface between a metal layer and a dielectric medium such as air. [14] Under the SPP mode, the electromagnetic energy of light excitation is converted to the energy of an electromagnetic wave on the interface that exhibits characteristics of both the photons and the electrons. Therefore, the SPP mode can confine incident light on the surface of the metal layer below the diffraction limit, and propagate along the surface. Owing to the confinement, the SPP electromagnetic field could be enhanced by up to 10 5 . [15] This provides a promising solution to the dilemma of LD photodetectors and therefore are widely used in thin-film plasmonic optoelectronic devices. [16] However, excitation of SPPs on the metal layers is conditional and normally entails a special excitation setup, such as gold film-coated prism, to meet momentum conservation requirements, and therefore its use in LD photodetectors is limited. In contrast, localized surface plasmons (LSPs) can be excited by direct illumination on metal nanostructures, such as metal nanoparticles (NPs). Compared to SPP, LSP is confined on the NP surface without propagation, and its enhancement depends on NP size and geometry. [17] Thus, well-developed fabrication methods of metal nanostructures have rendered LSPs a dominant technology for boosting the device performance of LD photodetectors in recent years. [18] As the photodetector materials change from bulk or thin film to the LD ones, plasmonic materials also evolve for optimized enhancement depending on the dimensions of the photo detectors of interests. Silver nanowires are deposited on a 2D MoS 2 as an SPP photodetector. [2] Gold NPs are deposited on 1D nanowire as an LSP-enhanced photodetector. [19] Perforated nanohole arrays are made on a gold film to directly excite Plasmonic nanostructures can achieve subdiffraction-limit light confinement with enhanced electric fields. By taking advantage of the light-confinement effect, various plasmonic photodetectors that combine low-dimensional (LD) semiconductor structures and plasmonic materials have recently demonstrated excellent plasmon-enhanced device performance and attracted significant research interest. In this review, the state-of-the-art progress in...

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“…V‐VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs . Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb‐Bi‐Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb‐Bi‐Se NWs and the ultra‐fast response time of Bi 2 S 3 NWs .…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…65,[112][113][114][115] V-VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs. 68,[116][117][118][119][120][121][122] Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb-Bi-Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb-Bi-Se NWs 116 and the ultra-fast response time of Bi 2 S 3 NWs. 117 Moreover, Sb 2 S 3 NWs exhibit not only a good light response over a wide spectral range, but also excellent properties over a wide temperature range.…”

Section: D Materialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

131

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Plasmonic hollow gold nanoparticles induced high-performance Bi2S3 nanoribbon photodetector

Abstract: A high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi 2 S 3 nanoribbon (NR) photodetector was fabricated for green light detection (560 nm).

Cited by 37 publications

References 46 publications

Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Plasmonic hollow gold nanoparticles induced high-performance Bi2S3 nanoribbon photodetector

Abstract: A high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi 2 S 3 nanoribbon (NR) photodetector was fabricated for green light detection (560 nm).

Cited by 37 publications

References 46 publications

Porous Ag/TiO2-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Porous Ag/TiO2-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Porous Ag/TiO₂-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response