High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates

Liu, J.L.; Wang, H.; Li, X.; Chen, H.; Zhang, Z.K.; Pan, Wenwu; Luo, Guo Qing; Yuan, Cailei; Ren, Yuchen; Lei, Wen

doi:10.1016/j.jallcom.2019.05.299

Cited by 56 publications

(29 citation statements)

References 36 publications

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“…As shown by the high-resolution transmission electron microscopy (TEM) study of the Bi 2 Te 3 nanoplate, no oxygen vacancy were observed. [2,9] As a result, type (1) trapping states are the main reason for the hysteresis effect observed, which will be studied in details in the following. Figure 2a shows the transfer curves of the Bi 2 Te 3 nanoplate FET device measured in the air before and after baking at 120 °C for 2 h in a vacuum tube with flushing argon gas.…”

Section: Resultsmentioning

confidence: 99%

“…As shown by the high‐resolution transmission electron microscopy (TEM) study of the Bi 2 Te 3 nanoplate, no oxygen vacancy were observed. [ 2,9 ] As a result, type (1) trapping states are the main reason for the hysteresis effect observed, which will be studied in details in the following.…”

Section: Resultsmentioning

confidence: 99%

“…[ 8,9 ] The characterization results of the grown Bi 2 Te 3 nanoplates, SEM images, atomic force microscopy data, Raman spectrum, energy‐dispersive X‐ray spectrometer data, and TEM results, have also been presented in the previous research. [ 2,8 ]…”

Section: Methodsmentioning

confidence: 99%

“…Over the past few years, 2D materials, such as graphene, topological insulators (TIs), and transition metal dichalcogenides (TMDs), have attracted significant attention for fabricating high‐performance FETs due to their unique physical properties such as high carrier mobility. [ 1,2 ] For example, Zomer et al. presented that the carrier mobility of graphene is as high as 12 500 cm 2 V –1 s –1 , which makes it a promising material for potential applications in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Liu

Pan

Wang

et al. 2020

Adv Elect Materials

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Recently, field‐effect transistors (FETs) based on two‐dimensional (2D) Bi2Te3 nanoplates have attracted much attention due to their great potential for fabricating high‐performance electronic devices. However, the gating property measurement of the Bi2Te3 nanoplate FETs exhibits hysteretic behavior in an ambient environment, which degrades not only their electrical properties, but also their device performance. This work presents a systematical study on the origins of this hysteresis effect in 2D Bi2Te3 FETs and explores effective approaches to minimize and eliminate this hysteresis effect. The hysteresis effect in 2D Bi2Te3 nanoplate FETs can be attributed to the charge trap states caused by the water molecules adsorbed on the nanoplate surface. To minimize and eliminate this hysteresis, poly(methyl methacrylate) layer is applied to passivate the 2D Bi2Te3 FETs, which leads to almost hysteresis‐free gating property and thus improves the carrier mobility and device performance. These results indicate that the surface/interface trap states of nanostructures can significantly influence their electrical properties and thus device performance, and as a result, surface passivation is required to minimize the influence of the surface/interface trap states and achieve high device performance.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Liu

Pan

Wang

et al. 2020

Adv Elect Materials

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“…Considering these factors, 2D materials including layered structure and nanoplates have recently attracted broad attention [17][18][19][20] . In particular, nanoplates are highly suitable because they can be used to fabricate high-quality single crystals via a low-cost wet process [21][22][23][24][25][26] . As such, nanoplates made of bismuth telluride-based ternary alloys are promising thermoelectric materials.…”

mentioning

confidence: 99%

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

Kimura

Mori

Yonezawa

et al. 2020

Sci Rep

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To improve thermoelectric performance of materials, the utilization of low-dimensional materials with a multi-alloy system is a promising approach. We report on the enhanced thermoelectric properties of n-type Bi 2 (Se x te 1−x) 3 nanoplates using solvothermal synthesis by tuning the composition of selenium (Se). Variation of the Se composition within nanoplates is demonstrated using X-ray diffraction and electron probe microanalysis. The calculated lattice parameters closely followed Vegard's law. However, when the Se composition was extremely high, an impurity phase was observed. At a reduced Se composition, regular-hexagonal-shaped nanoplates with a size of approximately 500 nm were produced. When the Se composition was increased, the shape distribution became random with sizes more than 5 μm. To measure the thermoelectric properties, nanoplate thin films (NPTs) were formed on a flexible substrate using drop-casting, followed by thermal annealing. The resulting NPTs sufficiently adhered to the substrate during the bending condition. The electrical conductivity of the NPTs increased with an increase in the Se composition, but it rapidly decreased at an extremely high Se composition because of the presence of the impurity phase. As a result, the Bi 2 (Se x te 1−x) 3 NPTs exhibited the highest power factor of 4.1 μW/(cm•K 2) at a Se composition of x = 0.75. Therefore, it was demonstrated that the thermoelectric performance of Bi 2 (Se x te 1−x) 3 nanoplates can be improved by tuning the Se composition. With the development of information technology including the Internet of things (IoT), the importance of thermoelectric materials that form flexible thin films has increased. This is because thermoelectric materials can directly convert thermal energy to electrical energy and vice versa. The electrical energy generated from the thermal energy via the Seebeck effect can be used to power wireless and wearable sensors 1-4. The thermal energy produced from electrical energy via the Peltier effect can be used to cool electronic devices 5-7. In both cases, the energy conversion efficiency depends on the dimensionless figure-of-merit ZT, defined as ZT = S 2 σT/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the absolute temperature. In addition, the power factor PF defined by PF = S 2 σ is an important material property. Among thermoelectric materials, bismuth telluride-based alloys which were developed in the 1950s are the most suitable materials for application to IoT technology 8-10. This is because they exhibit the highest thermoelectric properties near 300 K. At this temperature, thermoelectric materials can be used as both thermoelectric generators and Peltier coolers. In particular, ternary alloys such as Bi 2 (Se x Te 1-x) 3 are known to exhibit superior performance compared to binary alloys such as Bi 2 Te 3 and Bi 2 Se 3 11-14. Bismuth telluride-based alloys including binary and ternary alloys commonly have rhombohedral tetradymite-type crystal str...

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Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

Tao

et al. 2021

Adv Funct Materials

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Atom‐thick 2D metal telluride atomic crystals (2D MTACs) display many fascinating physical properties for potential applications in multiple fields. In this review, recent advances in the preparation, physical properties and applications of 2D MTACs are presented. First, three kinds of the most available preparation methods for 2D single crystal MTACs have been summarized, including single crystal‐based mechanical exfoliation, molecular beam epitaxy, and chemical vapor deposition. Second, the recent progress on abundant physical properties of 2D MTACs is briefly introduced, including surface electronic properties, optoelectronic properties, electronic transport, and thermoelectric properties, ferroelectric properties, superconducting properties, and ferromagnetic properties. Third, the potential electronics, spintronics, optoelectronics and energy applications of 2D MTACs are presented. Finally, some significant challenges and opportunities in 2D MTACs are briefly addressed.

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High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates

Cited by 56 publications

References 36 publications

Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

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High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates

Cited by 56 publications

References 36 publications

Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors

Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors