High-Performance WSe<sub>2</sub> Photodetector Based on a Laser-Induced p–n Junction

Chen, Jing; Wang, Qiyuan; Sheng, Yaochen; Cao, Gaoqi; Yang, Peng; Shan, Yabing; Liao, Fuyou; Zaheer, Muhammad; Bao, Wenzhong; Hu, Laigui; Liu, Ran; Cong, Chunxiao; Qiu, Zhijun

doi:10.1021/acsami.9b13948

Cited by 73 publications

(62 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our study, most pristine WSe 2 transistors (from few layers to about 20 nm) showed an electrondominated transport behavior (Figure 1b), which were then p-type doped by laser irradiation. Different from previous reports where high laser power density was used and obvious sample thinning was observed, [38,40] less focused laser was used here to avoid severe ablation of samples (Figure S1, Supporting Information) and hole doping could be achieved without obvious sample thinning (Figure S3, Supporting Information). Figure 1c shows the transfer curves of a typical WSe 2 transistor before and after a series of laser irradiation (by a laser scanning at the speed of 0.495 µm s −1 with the power density changing from 3.48 to 7.40 mW µm −2 ).…”

Section: Laser Irradiation Induced P-type Doping Of Wsementioning

confidence: 98%

“…Previously, Seo et al reported p-type doping of MoTe 2 by laser scanning on the electrodes, which provides an alternative way to control the carrier type. [37] Chen and Yang et al [38,39] reported the in-plane WSe 2 PN junctions using laser ablation. However, the doping mechanism and the PN junction profile were not sufficiently studied.…”

Section: Introductionmentioning

confidence: 99%

“…[ 37 ] Chen and Yang et al. [ 38,39 ] reported the in‐plane WSe 2 PN junctions using laser ablation. However, the doping mechanism and the PN junction profile were not sufficiently studied.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Zhu

Zhao

Wang

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Carrier doping is the basis of the modern semiconductor industry. Great efforts are put into the control of carrier doping for 2D semiconductors, especially the layered transition metal dichalcogenides. Here, the direct laser patterning of WSe 2 devices via light-induced hole doping is systematically studied. By changing the laser power, scan speed, and the number of irradiation times, different levels of hole doping can be achieved in the pristine electron-transport-dominated WSe 2 , without obvious sample thinning. Scanning transmission electron microscopy characterization reveals that the oxidation of the laser-radiated WSe 2 is the origin of the carrier doping. Photocurrent mapping shows that after the same amount of laser irradiation, with increasing thickness, the laser patterned PN junction changes from the pure lateral to the vertical-lateral hybrid structure, accompanied by the decrease in the open circuit voltage. The vertical-lateral hybrid PN junction can be tuned to a pure lateral one by further irradiation, showing possibilities to construct complex junction profiles. Moreover, a NOR gate circuit is demonstrated by direct patterning of p-doped channels using laser irradiation without introducing passive layers and metal electrodes with different work functions. This method simplifies device fabrication procedures and shows a promising future in large scale logic circuit applications.

show abstract

Section: Laser Irradiation Induced P-type Doping Of Wsementioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Zhu

Zhao

Wang

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Jia

Zhang

et al. 2022

Small Methods

View full text Add to dashboard Cite

The carrier mobilities of all the listed materials are experimental results except for those of SnSe, MoO 3 , MoSSe, WSSe, and graphdiyne that are theoretical calculated values; b) The n, k values for all the listed materials are at 1550 nm except for BP at 800 nm and h-BN at 1200 nm; c) The NLO parameters of PdSe 2 , PtSe 2 , BP, h-BN, MoO 3 , and CsPbBr 3 are at 800 nm. Those of MoS 2 and Bi 2 Te 3 are at 1060 nm. Those of other materials are at 1550 nm. In addition to third-order optical nonlinearity, strong second-order optical nonlinearity has been observed for graphene, GO, MoS 2 , WSe 2 , PdSe 2 , and h-BN, with typical χ (2) values varying from 10 -12 -10 -7 m V -1 . [33,[116][117][118][119][120] ; d) The values of n 2 and β are dependent on the film thickness, here we only provide typical values obtained from experimental measurements.

show abstract

“…These advances include enhanced contact performance [32,88] and greater control of active channel parameters. [113] Applications in electronics include 2D-material-based transistors [13,16,19,104,[114][115][116][117][118] and memory devices. [119][120][121][122]…”

Section: Electronic Applicationsmentioning

confidence: 99%

Optical Modification of 2D Materials: Methods and Applications

2022

View full text Add to dashboard Cite

on the same chip, which is promising for integrated electronics or photonics applications, [7] such as lasers, [8][9][10] optical modulators, [11] and photodetectors. [12] Indeed, 2D materials are an excellent candidate for postsilicone electronics due to their unique properties, versatile scaling of channel length, reduced device dimensionalities, and the possibility of creating circuits nearly at the atomic level. [13] Currently, some of the biggest challenges for 2D material synthesis include the lack of large-scale manufacturing and the necessity of harsh or arduous microand nanofabrication methods. Typical fabrication methods are based on chemical vapor deposition (CVD) and mechanical exfoliation from bulk crystals. The former involves a process that results in layers with relatively high concentrations of atomic impurities, [14] and the latter is limited in producing large area flakes. [14] Further fabrication steps for the incorporation of 2D materials into integrated devices typically require processes like electron-beam lithography and reactive ion etching, [15] both of which can be harmful to flakes that are atomically thin.All-optical processing of 2D materials has been demonstrated to overcome limitations of the conventional synthesis methods. It is time-and cost-effective, and it is also a promising fabrication alternative over CVD and mechanical exfoliation. Optical modification processes offer selectivity, locality, directionality, tunability, less harmful conditions, and on-demand functionalities, such as optical doping, [16][17][18][19] oxidation, [20][21][22][23] optical thinning, [24][25][26][27][28] and phase change. [29][30][31][32] Additionally, almost all of the optical modification and fabrication methods can be used for laser-direct writing (LDW) of patterns and structures at the microscale. [33][34][35][36] The high precision of LDW is particularly advantageous in the evolving world of nanofabrication. Lasers allow local modification of 2D material electronic bandgap, [37] thickness, [25] strain, [33,[38][39][40] and chemical composition, [19,41,42] even beyond the diffraction limit. [33] The created structures and patterns can often be directly used for applications in sensors, [22] energyprocessing devices, [43] and holography [44] (Figure 1). All the major demonstrations using LDW on 2D materials are listed in Table 1. Here, we review the optically assisted synthesis and fabrication methods of 2D materials, and their state-of-theart applications, providing detailed descriptions and features of optically engineered devices using 2D materials. We have straightforwardly introduced light-matter interactions and 2D-material-light interactions, and we also present our perspectives on this emerging field.2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and costineffective. Optical modification is demonstrated as an effective an...

show abstract

High-Performance WSe₂ Photodetector Based on a Laser-Induced p–n Junction

Cited by 73 publications

References 41 publications

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Optical Modification of 2D Materials: Methods and Applications

Contact Info

Product

Resources

About

High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction

Cited by 73 publications

References 41 publications

Direct Laser Patterning of a 2D WSe2 Logic Circuit

Direct Laser Patterning of a 2D WSe2 Logic Circuit

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Optical Modification of 2D Materials: Methods and Applications

Contact Info

Product

Resources

About

High-Performance WSe₂ Photodetector Based on a Laser-Induced p–n Junction

Direct Laser Patterning of a 2D WSe₂ Logic Circuit

Direct Laser Patterning of a 2D WSe₂ Logic Circuit