High-Performance ZnS: In Film and In Doping Effect on Its Structural, Optical and Electrical Properties

Abstract

This article reports on one novel material, In-doped ZnS (ZnS:In) film, which was prepared on glass substrate using electron beam evaporation method. By the incorporation of In atoms and the proper annealing treatment, ZnS:In performance was significantly improved, and In doping effect on the structure, photoluminescence (PL), transmittance spectra, bandgap, electrical properties are studied in detail. Experiment results show that 6 at.% In density is the proper doping level to significantly decrease the resistivity, and slight improve the optical transmittance, making ZnS:In one potential transparent conductor, which has not been reported up to now.

Structure, optical and magnetic characterizations of Mn doped ZnS dilute magnetic semiconductor synthesized by mechanical alloying

“…46 1. Introduction 51 Zinc sulfide being a wide band gap II-VI semiconductor is an 52 important host material for producing commercial phosphors [1] 53 having valuable properties such as photoluminescence (PL) [2], 54 electroluminescence [3,4] and thermal luminescence [5], which 55 make it a potential candidate for various high-performance devices 56 and displays [6]. Many new aspects of ZnS can be introduced by 57 controlling its different spin states if the lattice is doped with tran- 58 sitional metal Mn, to make it a DMS.…”