No abstract

This article reports on one novel material, In-doped ZnS (ZnS:In) film, which was prepared on glass substrate using electron beam evaporation method. By the incorporation of In atoms and the proper annealing treatment, ZnS:In performance was significantly improved, and In doping effect on the structure, photoluminescence (PL), transmittance spectra, bandgap, electrical properties are studied in detail. Experiment results show that 6 at.% In density is the proper doping level to significantly decrease the resistivity, and slight improve the optical transmittance, making ZnS:In one potential transparent conductor, which has not been reported up to now.