High permittivity in Zr doped NiO ceramics

Chen, K.; Yuan, Songliu; Li, P. L.; Gao, Feng; Liu, J.; Li, G. L.; Zhao, Aixuan; Lu, Xueliang; Liu, J. M.; Zhu, J. S.

doi:10.1063/1.2764217

Cited by 17 publications

(14 citation statements)

References 16 publications

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“…An exceptionally high value of about 10 4 is found for all compositions together with a strong frequency dependence at the lower frequency region. Low frequency dielectric constants are quite large compared with 30 of pure nickel oxide [19]. Threshold frequency corresponding to a sharp rise in 1 moves towards lower frequency region and 1 decreases with increase of Al content.…”

Section: Resultsmentioning

confidence: 85%

“…It is found that Ti and K co-doped NiO also show remarkable dielectric properties [17,18]. Replacement of Ni by tetravalent Zr gives rise to a high dielectric constant [19]. The incorporation of Li doped NiO in polyvinylidene fluoride polymer yields a high dielectric constant and low electrical conductivity near the percolation threshold [20].…”

Section: Introductionmentioning

confidence: 99%

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High dielectric permittivity observed in Na and Al doped NiO

Manna¹,

Dutta²,

De³

2008

J. Phys. D: Appl. Phys.

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Dielectric properties of Na and Al doped NiO (NANO) ceramics were studied as a function of frequency and temperature. Microstructures of polycrystalline samples reveal the grain size of 100–200 nm. The grain conductivity is higher than the grain boundary region. The concentration of Al has an excellent effect on the dielectric properties of NANO ceramics. The sample with Al 2% has the highest dielectric constant of the four samples. The electric modulus spectrum indicates the absence of the electrode effect in the dielectric constant. The high dielectric constant of the NANO ceramic systems is due to the formation of an insulating barrier layer across the grain boundary.

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Section: Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

High dielectric permittivity observed in Na and Al doped NiO

Manna¹,

Dutta²,

De³

2008

J. Phys. D: Appl. Phys.

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“…Among the different element doped NiO, (Li, Fe) and (Li, V) doped NiO have shown to exhibit giant dielectric response [1,2]. The observation of high dielectric constant in doped NiO is attributed mainly to a grain boundary barrier layer capacitance [9,47,48], which can arise due to the formation of core/shell structure with conductive grain as core and resistive boundary as shell [1,2].…”

Section: Evolution Of Electrical Properties Of Nio With Transition Mementioning

confidence: 99%

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

Mallick¹,

Mishra²

2012

MATERIALS

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We present a brief review on the evolution of structure, microstructure, electrical and magnetic properties of NiO with transition metal (TM) doping. The fcc structure of NiO is not affected with TM doping whereas the some of the TM ion influences the microstructure. The antiferromagnetic property of NiO is strongly modified with some of the TM (Fe, Mn, V) doping and the same is not much affected with some other TM (Co, Cr, Zn and Cu) doping. Not only the dopants but also the form of the material decides the magnetic order in the host matrix. Powder NiO exhibits room temperature ferromagnetism with Fe doping, superparamagnetism with Mn doping. NiO thin films on the other hand exhibit ferromagnetism with Fe, Mn and V doping. The ferromagnetic ordering in these cases was improved with Li co-doping. The increased ferromagnetism in these cases may be due to increase of hole concentration due to Li doping. Giant dielectric response has been observed for (Li, Fe) and (Li, V) doped NiO ceramics.

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“…The relaxation time τ has the relationship with temperature and activation energy, expressed as the following 25 τ τ…”

mentioning

confidence: 99%

“…The relaxation time τ has the relationship with temperature and activation energy, expressed as the following where τ 0 is the relaxation time at infinite temperature, U the activation energy for relaxation, T the absolute temperature, and k the Boltzmann constant.…”

mentioning

confidence: 99%

NiO Hierarchical Nanorings on SiC: Enhancing Relaxation to Tune Microwave Absorption at Elevated Temperature

Yang

Cao

Zhang

et al. 2015

ACS Appl. Mater. Interfaces

382

145

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We fabricated NiO nanorings on SiC, a novel hierarchical architecture, by a facile two-step method. The dielectric properties depend on temperature and frequency in the range from 373 to 773 K and X band. The imaginary part and loss tangent increase more than four times and three times with increasing temperature, respectively. The architecture demonstrates multirelaxation and possesses high-efficient absorption. The reflection loss exceeds -40 dB and the bandwidth covers 85% of X band (approximately -20 dB). The synergistic effect between multirelaxation and conductance is beneficial to the microwave absorption. Our findings provide a novel and feasible strategy to tune microwave absorption.

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High permittivity in Zr doped NiO ceramics

Cited by 17 publications

References 16 publications

High dielectric permittivity observed in Na and Al doped NiO

High dielectric permittivity observed in Na and Al doped NiO

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

NiO Hierarchical Nanorings on SiC: Enhancing Relaxation to Tune Microwave Absorption at Elevated Temperature

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