High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

Abstract

High-phase-purity zinc-blende ͑zb͒ InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite ͑w͒ InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ϳ0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

“…Since the bandgap of InN was revised to be in the infrared (IR) region (~0.7 eV) [1][2][3][4][5][6], Al 1-x In x N alloys have become very important semiconductors due to their wide bandgap range, covering deep ultraviolet (UV) to IR. Hence, most of the semiconductor optoelectronics can possibly be fabricated from Al 1-x In x N alloys, such as deep-UV laser diodes, infrared laser diodes, solar cells, high electron mobility transistors, solar-blinded photodetectors [7][8][9][10][11][12][13][14].…”

Polarization-resolved fine-structure splitting of zero-dimensional InxGa1−xN excitons

“…16 A ∼2.5-nm-thick compressively strained In x Ga 1-x N layer (nominally 20% In) was formed on a 230-nm GaN barrier layer and capped with a 30-nm-thick GaN layer. 17,18 Scanning transmission electron microscopy imaging reveals significant In segregation within the In x Ga 1-x N layer and the formation of QD-like exciton localization centers.…”

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

“…Several sets of state-of-the-art InN films grown by MBE at National Sun Yat-Sen University and National Taiwan University (set I), 12,13 Ritsumeikan University (sets II and III), [14][15][16] and Cornell University (set IV) 17,18 were studied. Each set of samples included an a-plane and either an In-or a N-polar InN films.…”