2013
DOI: 10.1016/j.materresbull.2012.10.030
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High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering

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Cited by 58 publications
(19 citation statements)
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“…Recently, ZnO nanocrystals (ZnO-NCs) have attracted a lot of interests because of their promising applications in optoelectronic devices, such as light-emitting devices or UV photodetectors [1,2]. The near-UV emission of ZnO-NC can also be utilized for efficient energy transfer to rare earth ions (e.g., Eu 3+ and Er 3+ ions) to obtain emission in the visible (for lighting) or in the near-infrared (for telecommunications) regions [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, ZnO nanocrystals (ZnO-NCs) have attracted a lot of interests because of their promising applications in optoelectronic devices, such as light-emitting devices or UV photodetectors [1,2]. The near-UV emission of ZnO-NC can also be utilized for efficient energy transfer to rare earth ions (e.g., Eu 3+ and Er 3+ ions) to obtain emission in the visible (for lighting) or in the near-infrared (for telecommunications) regions [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…The enhancement of IF/IR ratio compared to the dark ratio is about 57% and it is revealing that the response of the present heterojunction diode is excellent in generating photocurrent in comparison to previous reports on similar heterojunctions prepared by different methods [8,13,18]. Much Lower current contrast ratio, i.e.…”
Section: Electrical Propertiesmentioning
confidence: 44%
“…Due to its wide direct band gap energy (3.37 eV), relatively large exciton binding energy (60 meV at room temperature) and excellent optical and electrical properties, ZnO has been recognized as a promising material for UV detector [5][6][7]. Ultra violet detection by ZnO is based on strong oxygen chemisorptions and photodesorption mechanism on the surface and for efficient UV detection high quality ZnO heterojunctions are needed [8]. So far ZnO based UV photo-detectors with high performance have been reported using different methods such as molecular beam epitaxy [9] and sol-gel [10].…”
Section: Introductionmentioning
confidence: 99%
“…Since NiO thin film has relatively stable p-type semiconductor characteristics, wide direct band gap (3.7 eV) and cubic structure, n-ZnO/p-NiO heterojunctions have been reported as a suitable p-n heterojunction for fabricate the UV detector [14][15][16]. Sputtering, chemical vapour deposition and thermal evaporation methods have been used to synthesis NiO thin films [17][18][19].…”
Section: Introductionmentioning
confidence: 99%