2019
DOI: 10.1016/j.jallcom.2019.07.074
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High photoresponse sensitivity of lithium-doped ZnO (LZO) thin films for weak ultraviolet signal photodetector

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Cited by 39 publications
(6 citation statements)
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“…The generation of hot carriers not only improved the detection of green light (515 nm, ≈5 × 10 −3 A W −1 ) but also extended the detection range to red (630 nm, ≈5 × 10 −4 A W −1 ), and even to the NIR (780 nm, 10 4 A W −1 ). The 808 nm laser-annealed Au NPs/IZO PD offered good reliability and stability, performing with dynamic detection and keeping its operating lifetime for more than 22 d. Even though the high potential for use in solutions based on this technique has been performed, other kinds of MO functional nanostructure (ZnO:Cd-La, and TiO 2 :Ni) [59,60] or thin film (TiO 2 :Fe, ZnO:Al, and ZnO:Li) [61][62][63] composed from sol-gel network are still worth to be tested for optimizing the photoresponsivity or response speed. Furthermore, from our work, the initial trials of fabricating Au NPs/IZO PD on 3D printable polymer substrates for UV (365 nm) detection were accomplished under a low power 808 nm laser-annealing process.…”
Section: Discussionmentioning
confidence: 99%
“…The generation of hot carriers not only improved the detection of green light (515 nm, ≈5 × 10 −3 A W −1 ) but also extended the detection range to red (630 nm, ≈5 × 10 −4 A W −1 ), and even to the NIR (780 nm, 10 4 A W −1 ). The 808 nm laser-annealed Au NPs/IZO PD offered good reliability and stability, performing with dynamic detection and keeping its operating lifetime for more than 22 d. Even though the high potential for use in solutions based on this technique has been performed, other kinds of MO functional nanostructure (ZnO:Cd-La, and TiO 2 :Ni) [59,60] or thin film (TiO 2 :Fe, ZnO:Al, and ZnO:Li) [61][62][63] composed from sol-gel network are still worth to be tested for optimizing the photoresponsivity or response speed. Furthermore, from our work, the initial trials of fabricating Au NPs/IZO PD on 3D printable polymer substrates for UV (365 nm) detection were accomplished under a low power 808 nm laser-annealing process.…”
Section: Discussionmentioning
confidence: 99%
“…Therefore, the dopant materials and concentrations affect ZnO nanostructures' physical and chemical properties [15][16][17]. Among the dopant materials, silver (Ag) is used as a dopant material for zinc oxide nanostructures (ZnO NSs) to improve physical and chemical properties since Ag has high chemical stability and high electrical conductivity [18].…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, much attention has been paid towards p-type conductivity improvement and the betterment of the magnetic properties of ZnO, especially choosing lithium (Li) as a doping element [20,29]. The photoresponse sensitivity of ZnO NPs-based thin films has been enhanced to a great degree by Li doping with ZnO following the sol-gel process [30]. Thin film transistors are a dynamic element in such devices that employ an active matrix and can be well fabricated by alkali metal-doped ZnO [31].…”
Section: Introductionmentioning
confidence: 99%
“…Park et al have explained the performance of ZnO-based thin film transistors considering the combined effect of substitutional and interstitial doping of Li within the host matrix [31]. Zhu et al indicated that the Li Zn positions have been occupied by Li atoms within the ZnO host at lower Li concentrations [30], while Li i positions are more favorable at higher Li concentrations [42]. Park et al have enunciated incorporation of Li as Li i at a lower doping level of Li within ZnO (10 mol%) and simultaneous occupancy of interstitial as well as substitutional sites in the case of a higher doping concentration ( 10 mol%) of Li [31].…”
Section: Introductionmentioning
confidence: 99%
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