High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

(Invited) Twenty Five Years of Improvement of the Silicon Based TFT: From As-Deposited Polycrystalline Silicon to Nanostructured Silicon Deposited at Very Low Temperature

“…In this case the crystallization starts from the rear face of the bottom undoped film and continues still ECS Transactions, 50 (8) 3-14 (2012) the top of the doped film (10) (Figure 4). Following this new process, the performance of TFT was highly improved (Table II) The final improvement of the performance of SPC polysilicon based TFTs occurred just some years ago where the usual undoped active layer was very slightly doped in-situ during the deposition by phosphorus atoms (11). In fact, the very low content of phosphorus did not lead to a real doping but only to a passivation of defects.…”

Fringe Field Effect on Electrical Characteristics of Pentacene Thin-Film Transistors

“…[1][2][3][4] Although considerable progress in the electrical properties of organic TFTs has been made due to the efforts of researchers around the world, their electrical properties are still inferior to those in other classes of TFTs, such as polysilicon TFTs and zinc oxide TFTs. [5][6][7][8] For example, using pentacene, which is one of the most widely used organic semiconductors, the highest field-effect mobility in an organic TFT was reported to be approximately 3 cm 2 V À1 s À1 , which is higher than that of amorphous silicon TFTs. Unfortunately, this value is at least one order of magnitude lower than the mobility in those two other TFTs.…”