High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

Abstract

The characteristics and the fabrication of a 1.9 μm superluminescent diode utilizing a cavity suppression element are reported. The strong suppression of reflections allows the device to reach high gain without any sign of lasing modes. The high gain enables strong amplified spontaneous emission and output power up to 60 mW in a single transverse mode. At high gain, the spectrum is centered around 1.9 μm and the full width at half maximum is as large as 60 nm. The power and spectral characteristics pave the way for demonstrating compact and efficient light sources for spectroscopy. In particular, the light source meets requirements for coupling to silicon waveguides and fills a need for leveraging to mid-IR applications photonics integration circuit concepts exploiting hybrid integration to silicon technology.

Dynamic Disorder, Band Gap Widening, and Persistent Near-IR Photoluminescence up to At Least 523 K in ASnI3 Perovskites (A = Cs+, CH3NH3+ and NH2–CH═NH2+)

“…The resistance of the infrared PL to quenching even under extreme thermally energetic conditions is a remarkable property of the ASnI 3 perovskites that show comparative temperature dependence of their PL energies (see Figure S16). In conventional semiconductors, near-infrared luminescence even at room temperature is unusual and typically requires extremely high purity and quality crystals, as for example, in the case of GaSb . Generally, most common defects in these materials act as recombination centers and kill the room temperature PL.…”

“…In conventional semiconductors, near-infrared luminescence even at room temperature is unusual and typically requires extremely high purity and quality crystals, as for example, in the case of GaSb. 53 Generally, most common defects in these materials act as recombination centers and kill the room temperature PL. ASnI 3 , however, seem to be immune to such defects, which must surely exist in them given that no special efforts are typically made during synthesis to create particularly pure compounds.…”

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

“…Since their first demonstration, group III-nitride light emitters, including light-emitting diodes (LEDs) and laser diodes (LDs) [1,2], have evoked a wider range of industrial applications such as solid state lighting, visible light communications, and high capacity data storage [3,4]. The development of superluminescent diodes (SLDs) has recently attracted increasing research interests due to their unique features such as broadband emission, large modulation bandwidth, and being free of both efficiency-droop and speckle noise [5,6]. The working principle of SLDs is based on electrically driven pn-junction that generates amplified spontaneous emission through a single-pass or dual-pass gain medium [7].…”

GaSb superluminescent diodes with broadband emission at 2.55 μm

“…Operation at a high peak injection level without lasing, and hence high average power, is rendered possible by employing a cavity suppression (CS) element reported recently for the 2 lm wavelength. 12 High gain operation is particularly important for SLDs, as their output power is exponentially proportional to the modal gain. 19 The combination of the CS element and an advanced drive strategy allowed us to demonstrate an average output power of more than 3 mW at RT and a spectral full width at half maximum (FWHM) of 124 nm.…”

“…A tilted waveguide is a rather simple approach, which can provide an extremely low facet reflectivity of below 10 À5 . Recently, 12 we introduced a waveguide design in which the lasing was suppressed in 1.9 lm SLD by adding a CS element at one facet of a tilted RWG SLD. In the current report, we have tilted the RWG 8 with respect to the cavity facet, as the larger tilt angles suppress the lasing more effectively at longer wavelengths.…”