2002
DOI: 10.1063/1.1493227
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High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement

Abstract: We report on optically pumped semiconductor lasers emitting near 3.8 μm that exhibit high power and low output divergence. The lasers incorporate multiple InAs/InGaSb/InAs type-II wells imbedded in an InGaAsSb waveguide that is designed to absorb the pump emission. When operated at 85 K, 0.25 mm×2.5 mm broad area devices produce >5 W of peak power under long pulse conditions. Moreover, these extremely bright devices exhibit a fast axis divergence of only ∼15° full width at half maximum (FWHM), coupled w… Show more

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Cited by 48 publications
(19 citation statements)
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“…At the lasing threshold for lattice temperature of 180 K, the average power density (average power) used in Ref. [2] is the same magnitude as (-14 times greater than) that used in this work at 50% duty cycle. We note that persistent heating in excess of 50 K lasting for hundreds of picoseconds has been observed in luminescence measurements in narrow-band-gap superlattices [15].…”
Section: Resultsmentioning
confidence: 65%
“…At the lasing threshold for lattice temperature of 180 K, the average power density (average power) used in Ref. [2] is the same magnitude as (-14 times greater than) that used in this work at 50% duty cycle. We note that persistent heating in excess of 50 K lasting for hundreds of picoseconds has been observed in luminescence measurements in narrow-band-gap superlattices [15].…”
Section: Resultsmentioning
confidence: 65%
“…14 The strong sensitivity of the PL intensity to T active is not surprising since most earlier studies at both NRL and elsewhere showed a relatively narrow window of 400-450°C for optimal ''W'' structure growth. 7,8,17,18 However, for the present samples we observe a systematic increase in the PL intensity as T active increases from 435 to 507°C, followed by a precipitous drop-off at the highest temperature of 526°C. These results identify an optimal window for ''W''-structure growth of 487-507°C.…”
Section: Photoluminescence and Xstm Characterizationmentioning
confidence: 52%
“…Estimating the thermal diffusion time along the growth direction requires knowledge of the thermal resistance along various interfaces in the heterostructure. To avoid this heating buildup, laser operation is usually limited to 32 urn pulses of 1% duty cycle [2]. At the lasing threshold for lattice temperature of 180 K, the average power density (average power) used in Ref.…”
Section: Resultsmentioning
confidence: 99%
“…Type-II quantum well (QW) antimonide based MIR lasers have advanced rapidly since their first demonstration in 1994 [1], with peak power outputs reaching 5 W at low temperatures [2]. However their performance at high temperatures fall short of theoretical expectations.…”
Section: Introductionmentioning
confidence: 99%
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