2010
DOI: 10.1109/ted.2009.2035538
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High-Power and High-Efficiency InGaN-Based Light Emitters

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Cited by 335 publications
(205 citation statements)
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“…This phenomenon is commonly referred to as the "green gap" or "green-yellow gap" and may be attributed to stronger piezoelectric and spontaneous polarisation effects in higher indium content InGaN devices. 19 Laubsch et al 20 reported values of B in the region of 1:2 Â 10 À12 cm 3 s À1 for a 520 nm emitting device, compatible with those shown in Fig. 3.…”
Section: -supporting
confidence: 75%
“…This phenomenon is commonly referred to as the "green gap" or "green-yellow gap" and may be attributed to stronger piezoelectric and spontaneous polarisation effects in higher indium content InGaN devices. 19 Laubsch et al 20 reported values of B in the region of 1:2 Â 10 À12 cm 3 s À1 for a 520 nm emitting device, compatible with those shown in Fig. 3.…”
Section: -supporting
confidence: 75%
“…Using this resonant PL experiment, we can exclude loss channels caused by current injection and leakage. Previously, it has been shown that droop is a QW internal loss process exhibiting the same dependency on charge carrier density as Auger recombination 4,5,9,17,19 and that first-principles calculations of Auger coefficients yield results that can quantitatively explain the drop in efficiency. 11 Our detailed discussion of the relationship between UV intensity and amount of lost charge carriers proves that at least 1% of droop can be ascribed to Auger processes, with the realistic percentage likely to be higher.…”
Section: -mentioning
confidence: 99%
“…7,8 In this model, the drop in efficiency towards high current densities is ascribed to a loss process proportional to n 3 , represented by the recombination coefficient C. Due to the cubic dependency on the charge carrier density under electroluminescence as well as under photoluminescence (PL) conditions, Auger recombination in the active layer is one of the main suspects to be the cause of the drop in efficiency. 4,5,9 Yet, using microscopic calculations, Hader et al simulated the magnitude of direct Auger recombination in the (AlGaIn)N material system and concluded that Auger losses are too small to account for the droop. 10 Taking phononassisted Auger recombination into account, Kioupakis et al…”
mentioning
confidence: 99%
“…The RT IQE of InGaN/GaN MQW structures, and LEDs, without prelayers has been measured to increase with increasing number of QWs, an effect which has been attributed to the recapture of carriers by adjacent QWs [23,24]. To investigate the effects of the band profile modifications by the prelayer on this process, the temperature dependences of the PL from the structures in our study were obtained using the same excitation conditions as the low temperature PL spectra described above.…”
Section: Resultsmentioning
confidence: 99%