Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Green, Richard P.; McKendry, Jonathan J. D.; Massoubre, David; Gu, Erdan; Dawson, Martin D.; Kelly, Anthony E.

doi:10.1063/1.4794078

Cited by 68 publications

(50 citation statements)

References 33 publications

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“…The bandwidth is size-and current-dependent reaching a maximum of 260 MHz and 180 MHz at around 150 mA for the standalone micro-LED and the hybrid red device, respectively. The current dependence can be attributed to the reduced carrier lifetime in the active region of the micro-LEDs as the current, and hence the carrier density, increases [12,21]. The response of the NM, obtained by subtracting the standalone micro-LED response to the response of the hybrid device [9], further affects the bandwidth of the hybrid sources.…”

Section: Bandwidth Measurementsmentioning

confidence: 99%

Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters

Santos¹,

Rajbhandari²,

Tsonev³

et al. 2016

Opt. Express

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Abstract:We report free space visible light communication using InGaN sources, namely micro-LEDs and a laser diode, down-converted by a redemitting AlInGaP multi-quantum-well nanomembrane. In the case of micro-LEDs, the AlInGaP nanomembrane is capillary-bonded between the sapphire window of a micro-LED array and a hemispherical sapphire lens to provide an integrated optical source. The sapphire lens improves the extraction efficiency of the color-converted light. For the case of the downconverted laser diode, one side of the nanomembrane is bonded to a sapphire lens and the other side optionally onto a dielectric mirror; this nanomembrane-lens structure is remotely excited by the laser diode. Data transmission up to 870 Mb/s using pulse amplitude modulation (PAM) with fractionally spaced decision feedback equalizer is demonstrated for the micro-LED-integrated nanomembrane. A data rate of 1.2 Gb/s is achieved using orthogonal frequency division multiplexing (ODFM) with the laser diode pumped sample.

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Section: Bandwidth Measurementsmentioning

confidence: 99%

Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters

Santos¹,

Rajbhandari²,

Tsonev³

et al. 2016

Opt. Express

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“…At present, we attribute this behavior to a complex interplay between the carrier recombination lifetime and the RC time constant of the device. We note that it is possible to use measurements of this kind to ascertain the recombination coefficients in micro-LEDs [12], and we aim to perform such an analysis on this device in due course. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Tian

McKendry

Gong

et al. 2013

2013 IEEE Photonics Conference

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“…(9) and an exponential junction behavior given by Eqs. (11) and (13) • HR100: same as HR190 but with a p-GaN thickness of 100 nm • HR190II: same as HR190 but with an ideality factor of n ¼ 4.5 • LR190: having a 190 nm thick p-GaN layer with low resistivity given by Eq. (8) and a resistive junction behavior given by Eqs.…”

Section: B Materials Parametersmentioning

confidence: 99%

“…Micro-and nano-sized emitters also offer opportunities to explore undiscovered device physics because they can be operated at much larger current densities than macroscopic devices. 10 The implications of high current density operation are the topic of ongoing research and relate to important challenges of III-nitride research, in particular carrier dynamics 11 and the so-called "efficiency droop." 12,13 Most patterning techniques rely on etching methods.…”

Section: Introductionmentioning

confidence: 99%

Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations

Herrnsdorf

Xie

Watson

et al. 2014

Journal of Applied Physics

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The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.

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Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Cited by 68 publications

References 33 publications

Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters

Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations

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