2008
DOI: 10.1002/pssc.200778738
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High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

Abstract: High power n‐GaN/n‐AlGaN/GaN metal‐insulator‐semi‐conductor high electron mobility transistors (MIS‐HEMTs) with high‐k Ta2O5 dielectric layer were fabricated on a 3‐inch S.I.‐SiC substrate, for the first time. An n‐GaN/n‐AlGaN/GaN MIS‐HEMTs with 400 V breakdown voltage were obtained by using Ta2O5 insulating layer/n‐GaN capstructure. The single‐chip GaN MIS‐HEMTs amplifier with a Ta2O5 layer operated at 50 V achieve a high output power of 113 W with a linear gain of 16.3 dB at 2.5 GHz. We also investigated the… Show more

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Cited by 11 publications
(7 citation statements)
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“…Low gate-leakage current of less than 1 × 10 A -8 /mm with a high breakdown voltage (BV gd ) of 400 V was observed. Both a high output power over 100 W and high gain of 16 dB were successfully achieved at 2.5 GHz [18].…”
Section: Mis-hemt Mis Hemts Have Been Required Tomentioning
confidence: 95%
See 1 more Smart Citation
“…Low gate-leakage current of less than 1 × 10 A -8 /mm with a high breakdown voltage (BV gd ) of 400 V was observed. Both a high output power over 100 W and high gain of 16 dB were successfully achieved at 2.5 GHz [18].…”
Section: Mis-hemt Mis Hemts Have Been Required Tomentioning
confidence: 95%
“…Our developed structures are shown in Fig. 19 [18]. SiN was used as the pas- sivation layer between electrodes.…”
Section: Mis-hemt Mis Hemts Have Been Required Tomentioning
confidence: 99%
“…12) and very low gate-leakage current with a high breakdown voltage BVgd of 400 V. On-wafer load-pull measurements for the 1 mm devices show an output power of 9.4 W/mm and a linear gain of 23.5 dB with a PAE of 62% at Vds of 70 V at 2 GHz. In addition, both a high output power over 100 W and high gain of 16 dB were successfully achieved at 2.5 GHz for the large periphery MIS-HEMT amplifier [6]. …”
Section: Mis-hemtmentioning
confidence: 95%
“…The basic structure of surface passive layer is illustrated in the Figure 6. Many different insulation materials have been explored as the surface passivation layer for AlGaN/GaN HEMTs, including SiO 2 [93,99], Si 3 N 4 [100], ZrO 2 [94,101], HfO 2 [95,96], Ga 2 O 3 [43,102], AlN [103][104][105][106], Sc 2 O 3 [107], TiO 2 [108], ZnO 2 [109], NiO [110], Ta 2 O5 [111], Al 2 O 3 [112][113][114], AlON [43] and so forth. In addition to the surface passivation, dielectric-free passivation technologies have also been proposed and demonstrated, for example, oxygen plasma oxidization [115,116], ozone oxidization [117], chemical oxidization [118], SiH 4 treatment [119] and so forth.…”
Section: Surface Passivationmentioning
confidence: 99%