High-power and low-noise 1.55 μm InP-based quantum dash lasers

Resneau, P.; Calligaro, M.; Bansropun, S.; Parillaud, O.; Krakowski, M.; Schwertberger, R.; Somers, A.; Reithmaier, Johann Peter; Forchel, A.

doi:10.1117/12.544958

Cited by 8 publications

(6 citation statements)

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“…In longer RWG devices with as-cleaved facets, a cavity length of 2.5 mm and epi-side down mounting, a differential efficiency of 0.143 W A −1 /facet and a CW output power of 50 mW/facet were obtained in a single lateral mode [47]. These devices can be operated in CW beyond 85˚C.…”

Section: Ridge Waveguide Lasersmentioning

confidence: 96%

InP based lasers and optical amplifiers with wire-/dot-like active regions

Reithmaier¹,

Somers²,

Deubert³

et al. 2005

J. Phys. D: Appl. Phys.

134

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Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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Section: Ridge Waveguide Lasersmentioning

confidence: 96%

InP based lasers and optical amplifiers with wire-/dot-like active regions

Reithmaier¹,

Somers²,

Deubert³

et al. 2005

J. Phys. D: Appl. Phys.

134

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“…33(c). Room temperature CW operation of 4 stack graded SCH InAs/InGaAlAs Qdash lasers was reported by Resneau et al [226] who developed 1.57 µm ridge-waveguide lasers with total power > 100 mW and a flat low RIN of -162 dB/Hz in 0.1-13 GHz range (lower than the Qwell laser counterpart). The extracted small internal loss of 4 cm -1 from cavity length dependence measurements of the external quantum efficiency is among the smallest reported in this material system.…”

Section: Lasers On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…Subsequently, Resneau et al [36] demonstrated a flat low relative intensity noise (RIN) of À162 dB/Hz and a total power >100 mW on a 4 stack graded separate confinement heterostructure (SCH) InAs/InGaAlAs ridge-waveguide Qdash laser emitting at 1.57 mm. Furthermore, the corresponding internal loss was very low 4 cm À1 which is among the lowest on this material system.…”

Section: Inas/ingaalas/inp Qdash Lasersmentioning

confidence: 99%